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MFG:10000  Package Cooled:Infineon  

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Part Number: BSP75

 

MFG: 10000

Package Cooled: Infineon

 

Description: N channel vertical power FET in Smart Power Technology. Fully protected by embedded protection functions.


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BSP75 General Description


N channel vertical power FET in Smart Power Technology. Fully protected by embedded protection functions.

BSP75 Maximum Ratings

Parameter
Symbol
Values
Unit
Continuous drain source voltage
(overvoltage protection see page 4)
VDS
55
V
Drain source voltage for
short circuit protection
VDS
32
V
Load dump protectionVLoadDump=UP+US; UP=13.5 V
RI
1)=2 W; td=400ms; IN=low or high (8V) RL=50 W
RI=2 W; td=400ms; IN=high (8V) RL=22 W
VLoadDump 2)
80
47
V
Continuous input voltage
VIN
-0.2 ... +10
V
Peak input voltage
VIN
-0.2 ... +20
V
Operating temperature range
Storage temperature range
Tj
Tstg
-40 ...+150
-55 ...+150
°C
Power dissipation (DC)
Ptot
1.8
W
Unclamped single pulse inductive energy
ID(ISO) = 0.7 A
EAS
550
mJ
Electrostatic discharge voltage (Human Body Model)
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993
VESD
4000
V
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
40/150/56

BSP75 Features

· Logic Level Input
· Input protection (ESD)
· Thermal shutdown (with restart)
· Overload protection
· Short circuit protection
· Overvoltage protection
· Current limitation

BSP75 Typical Application

` All kinds of resistive, inductive and capacitive loads in switching applications
` C compatible power switch for 12 V and 24 V DC applications
` Replaces electromechanical relays and discrete circuits

BSP75 datasheet

BSP75
PDF/DataSheet Download

  • Datasheet: BSP75
  • File Size: 56502 KB
  • Manufacturer: SIEMENS [Siemens Semiconductor Group]
  • Click here to Download

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