Position: Home > Datasheet list > BSS Series > Index B > BSS192E6327
Electronica China

Purchase BSS192E6327, In-stock BSS192E6327 From SeekIC.

MFG:Infineon Technologies  Category:Discrete Semiconductor Products  

BSS192E6327 Product Image

BSS Series Datasheet download

Five Points

Part Number: BSS192E6327

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

 

 

Descriptions: MOSFET P-CH 240V 150MA SOT-89

Urgent Purchase

BSS192E6327 General Description

MOSFET P-CH 240V 150MA SOT-89

BSS192E6327 Parameters

Technical/Catalog InformationBSS192E6327
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)240V
Current - Continuous Drain (Id) @ 25° C150mA
Rds On (Max) @ Id, Vgs20 Ohm @ 150mA, 10V
Input Capacitance (Ciss) @ Vds 130pF @ 25V
Power - Max1W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs-
Package / CaseSOT-89
FET FeatureLogic Level Gate
Lead Free StatusRequest Inventory Verification
RoHS StatusRequest Inventory Verification
Other Names BSS192E6327
BSS192E6327
BSS192INTR ND
BSS192INTRND
BSS192INTR

BSS192E6327 datasheet

BSS100
PDF/DataSheet Download

  • Datasheet: BSS100
  • File Size: 291374 KB
  • Manufacturer: SIEMENS [Siemens Semiconductor Group]
  • Click here to Download

Find BSS192E6327 Suppliers

  • ·BSS101
  • SIEMENS [Siemens Semiconductor Group] 
  • SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) 
  • 81058 KB
  • BSS101 Datasheet Download
  • ·BSS110
  • SIEMENS [Siemens Semiconductor Group] 
  • SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level) 
  • 291933 KB
  • BSS110 Datasheet Download
  • ·BSS119
  • SIEMENS [Siemens Semiconductor Group] 
  • SIPMOS Small-Signal Transistor (N channel Enhancement mode) 
  • 83292 KB
  • BSS119 Datasheet Download
  • ·BSS123
  • INFINEON [Infineon Technologies AG] 
  • SIPMOS Small-Signal-Transistor 
  • 79299 KB
  • BSS123 Datasheet Download
  • ·BSS123-7
  • DIODES [Diodes Incorporated] 
  • N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 
  • 69118 KB
  • BSS123-7 Datasheet Download
  • ·BSS123A
  • ZETEX [Zetex Semiconductors] 
  • N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET 
  • 46340 KB
  • BSS123A Datasheet Download
  • ·BSS123LT1
  • ONSEMI [ON Semiconductor] 
  • Power MOSFET 170 mAmps, 100 Volts 
  • 59564 KB
  • BSS123LT1 Datasheet Download
  • ·BSS123LT1/D
  •  
  • CASE 318-08, STYLE 21 SOT-23 (TO?36AB) 
  • 95359 KB
  • BSS123LT1/D Datasheet Download

BSS192E6327 Relative Products

Hotspot Suppliers Product

  • Models: GC80503CSM
Price: 63-65 USD

    GC80503CSM

    Price: 63-65 USD

    BGA, 266MHz, OEM/tray microprocessor, 2V, 7.6W, System Management Mode, Clock Control

  • Models: XC3S200-VQG100C
Price: 0.1-0.5 USD

    XC3S200-VQG100C

    Price: 0.1-0.5 USD

    Field-Programmable Gate Array, VQFP, RoHS Compliant, –0.5 to 1.32 V, XC3S200-VQG100C

  • Models: ad780anz
Price: 2.85-2.92 USD

    ad780anz

    Price: 2.85-2.92 USD

    ultrahigh precision bandgap reference voltage, DIP-8, 36 V, 500 mW, Ultralow Drift, High Accuracy,...

  • Models: PC410L
Price: 0.55-0.8 USD

    PC410L

    Price: 0.55-0.8 USD

    High Speed Response, High CMR OPIC Photocoupler

  • Models: LM317
Price: 1-10 USD

    LM317

    Price: 1-10 USD

    8-SOP, 3-Terminal, adjustable regulator, 1.5A, 80dB ripple rejection, 1.2V, 3 kV

  • Models: K6T4008U1C-GF70
Price: 0.6-0.88 USD

    K6T4008U1C-GF70

    Price: 0.6-0.88 USD

    512K x 8 bit, Low Power, Low Voltage, CMOS Static RAM, DIP/SOP, -0.5 to VCC+0.5 V

  • Models: KB926QFD3
Price: 3.2-3.8 USD

    KB926QFD3

    Price: 3.2-3.8 USD

    Programmable Sound Generator, DIP, 5V

  • Models: G2R-2-DC5V
Price: 0.95-1.2 USD

    G2R-2-DC5V

    Price: 0.95-1.2 USD

    power Relay, DIP, Various Models, 106 mA, 47 W, 0.53 W, High-sensitivity, high-capacity

  • Models: SI3210M-KT
Price: 0.7-0.85 USD

    SI3210M-KT

    Price: 0.7-0.85 USD

    low-voltage, CMOS device, Low Voltage

  • Models: BLW86
Price: 15-15 USD

    BLW86

    Price: 15-15 USD

    N-P-N silicon planar epitaxial transistor, 65 V, DIP, 4 A, 3/8" flange envelope

  • Models: TB2104F
Price: 1.5-2 USD

    TB2104F

    Price: 1.5-2 USD

    fluorescent display tube driver IC, supply voltage -0.3 to 7.0V, 800mW Power dissipation

  • Models: UC3842B
Price: 0.08-1.6 USD

    UC3842B

    Price: 0.08-1.6 USD

    control IC, SOP8, 0.5mA, – 0.3 to 5.5 V, 1.25 W, N-Channel MOSFETs, 250kHz

Map list:   ABCDEFGHIJKLMNOPQRSTUVWXYZ    0123456789All