Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Power - Max: 1W
Current - Continuous Drain (Id) @ 25° C: 190mA
Drain to Source Voltage (Vdss): 250V
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Gate Charge (Qg) @ Vgs: 6.1nC @ 10V
Series: SIPMOS®
Manufacturer: Infineon Technologies
Vgs(th) (Max) @ Id: 2V @ 130µA
Input Capacitance (Ciss) @ Vds: 104pF @ 25V
Rds On (Max) @ Id, Vgs: 12 Ohm @ 190mA, 10V
Supplier Device Package: PG-SOT89-4
Parameters: | Technical/Catalog Information | BSS192PE6327 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 250V |
| Current - Continuous Drain (Id) @ 25° C | 190mA |
| Rds On (Max) @ Id, Vgs | 12 Ohm @ 190mA, 10V |
| Input Capacitance (Ciss) @ Vds | 104pF @ 25V |
| Power - Max | 1W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 6.1nC @ 10V |
| Package / Case | SOT-89 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | BSS192PE6327
BSS192PE6327
BSS192PE6327INTR ND
BSS192PE6327INTRND
BSS192PE6327INTR
|
BSS192PE6327 Data Sheet
