BSS209PW

Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Package / Case: SC-70, SOT-323
Current - Continuous Drain (Id) @ 25° C: 580mA
Packaging: Cut Tape (CT)
Manufacturer: Infineon Technologies
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 550 mOhm @ 580mA, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 3.5µA
Gate Charge (Qg) @ Vgs: 1.38nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 89.9pF @ 15V
Power - Max: 520mW
Supplier Device Package: PG-SOT323-3


Features:

• P-Channel
• Enhancement mode
• Super Logic Level (2.5 V rated)
• 150°C operating temperature
• Avalanche rated
• dv/dt rated


Specifications

Parameter	Symbol	Value	Unit
Continuous drain current A TA = 25 °C TA = 70 °C	ID	-0.58 -0.46	A
Pulsed drain current TA = 25 °C	I D puls	-2.3
Avalanche energy, single pulse ID = -0.33 A , VDD = -25 V, RGS = 25	EAS	3.5	mJ
Reverse diode dv/dt IS = -0.33 A, VDS = -48 V, di/dt = 200 A/s, Tjmax = 150 °C	dv/dt	-6	kV/s
Gate source voltage	VGS	±12	V
Power dissipation TA = 25 °C	Ptot	0.52	W
Operating and storage temperature	Tj , Tstg	-55...+150	°C
IEC climatic category; DIN IEC 68-1		55/150/56

Parameters:

Technical/Catalog Information	BSS209PW
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	580mA
Rds On (Max) @ Id, Vgs	550 mOhm @ 580mA, 4.5V
Input Capacitance (Ciss) @ Vds	89.9pF @ 15V
Power - Max	520mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	1.38nC @ 4.5V
Package / Case	SOT-323
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BSS209PW BSS209PW BSS209PWINTR ND BSS209PWINTRND BSS209PWINTR