BSS84PW

Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Package / Case: SC-70, SOT-323
Power - Max: 300mW
Drain to Source Voltage (Vdss): 60V
Gate Charge (Qg) @ Vgs: 1.5nC @ 10V
Packaging: Cut Tape (CT)
Current - Continuous Drain (Id) @ 25° C: 150mA
Series: SIPMOS®
Manufacturer: Infineon Technologies
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-SOT323-3
Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 10V
Input Capacitance (Ciss) @ Vds: 19.1pF @ 25V


Features:

· P-Channel
· Enhancement mode
· Avalanche rated
· Logic Level
· dv/dt rated


Specifications

Parameter	Symbol	Value	Unit
Continuous drain current TA=25	I D	-0.15	A
Pulsed drain current TA=25	I D,pulse	-0.6
Avalanche energy, single pulse ID=-0.15 A , VDD=-25V, RGS=25􀀀	EAS	2.61	mJ
Avalanche energy, periodic limited by Tjmax	EAR	0.03
Reverse diode dv /dt IS=-0.15A, VDS=-48V, di/dt=-200A/s, Tjmax=150	dv /dt	6	kV/s
Gate source voltage	VGS	±20	V
Power dissipation TA=25	Ptot	0.3	W
Operating and storage temperature	T j, T stg	-55... +150
IEC climatic category; DIN IEC 68-1		55/150/56

 

Parameters:

Technical/Catalog Information	BSS84PW
Vendor	Infineon Technologies (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	150mA
Rds On (Max) @ Id, Vgs	8 Ohm @ 150mA, 10V
Input Capacitance (Ciss) @ Vds	19.1pF @ 25V
Power - Max	300mW
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	1.5nC @ 10V
Package / Case	SOT-323
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BSS84PW BSS84PW BSS84PWINDKR ND BSS84PWINDKRND BSS84PWINDKR