BST72A,112

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Current - Continuous Drain (Id) @ 25° C: 190mA
Gate Charge (Qg) @ Vgs: -
Drain to Source Voltage (Vdss): 100V
Mounting Type: Through Hole
Packaging: Bulk
Series: TrenchMOS™
Manufacturer: NXP Semiconductors
Power - Max: 830mW
Input Capacitance (Ciss) @ Vds: 40pF @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-92-3
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Rds On (Max) @ Id, Vgs: 10 Ohm @ 150mA, 5V


Parameters:

Technical/Catalog Information	BST72A,112
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	190mA
Rds On (Max) @ Id, Vgs	10 Ohm @ 150mA, 5V
Input Capacitance (Ciss) @ Vds	40pF @ 10V
Power - Max	830mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	-
Package / Case	TO-92-3
FET Feature	Logic Level Gate
Drawing Number	568; SOT54; ; 5
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BST72A,112 BST72A,112