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Part Number: BST72A

 

MFG: PHIL

 

D/C: 05+

Description: N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use in...


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BST72A General Description


N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use in telephone ringer circuits and for application with relay, high-speed and line-transformer drivers.

BST72A Maximum Ratings

Drain-source voltage VDS max. 80V
Drain-source voltage (non-repetitive peak; tp 2 ms) VDS(SM)   100V
Gate-source voltage (open drain) VGSO max. 20 V
Drain current (DC) ID max. 300 mA
Drain current (peak) IDM max. 600 mA
Total power dissipation up to Tamb = 25 (note 1) Ptot max. 0.83W
Storage temperature range Tstg -65 to + 150
Junction temperature Tj max. 150
THERMAL RESISTANCE
From junction to ambient (note 1) Rth j-a = 150K/W

Note
1. Transistor mounted on printed circuit board, max. lead length 4 mm.

BST72A Features

· Direct interface to C-MOS, TTL,etc.
· High-speed switching
· No second breakdown

BST72A datasheet

BST72A
PDF/DataSheet Download

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