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BST80

Features: · Low drain-source on-state resistance· Direct interface to C-MOS, TTL, etc.· High-speed switching· No secondary breakdown.Application· Thin and thick film circuits· Relay, high-speed and line transformer drivers.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS ...

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SeekIC No. : 004302449 Detail

BST80: Features: · Low drain-source on-state resistance· Direct interface to C-MOS, TTL, etc.· High-speed switching· No secondary breakdown.Application· Thin and thick film circuits· Relay, high-speed and ...

BST80 Data Sheet

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Part Number:
BST80
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Low drain-source on-state resistance
· Direct interface to C-MOS, TTL, etc.
· High-speed switching
· No secondary breakdown.


Application

· Thin and thick film circuits
· Relay, high-speed and line transformer drivers.


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage (DC)   - 80 V
VGSO gate-source voltage (DC) open drain - ±20 V
ID drain current (DC)   - 500 mA
IDM peak drain current   - 1 A
Ptot total power dissipation Tamb 25 ; note 1 - 1 W
Tstg storage temperature   -65 +150
Tj junction temperature   - 150



Description

N-channel enhancement mode vertical D-MOS transistor BST80 in a SOT89 package.


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