MFG:NXP Package Cooled:SOT-23 D/C:08+
MFG: NXP
Package Cooled: SOT-23
D/C: 08+
Description: N-channel enhancement mode vertical D-MOS transistor in SOT23 envelope and designed for use as Surface...
N-channel enhancement mode vertical D-MOS transistor in SOT23 envelope and designed for use as Surface Mounted Device (SMD) in thin and thick-film circuits for telephone ringer and for application with relay, high-speed and line-transformer drivers.
| Drain-source voltage | VDS | max. | 80V |
| Drain-source voltage (non-repetitive peak; tp 2 ms) | VDS(SM) | max. | 100V |
| Gate-source voltage (open drain) | ±VGSO | max. | 20 V |
| Drain current (DC) | ID | max. | 175 mA |
| Drain current (peak) | IDM | max. | 600 mA |
| Total power dissipation up to Tamb = 25 (note 1) | Ptot | max. | 300 W |
| Storage temperature range | Tstg | -65 to + 150 | |
| Junction temperature | Tj | max. | 150 |
| THERMAL RESISTANCE | |||
| From junction to ambient (note 1) | Rth j-a | = | 430 K/W |
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from suchimproper use or sale.
BST82
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