BT131-800D

On-State RMS Current (It RMS) :
Mounting Style : Through Hole
Packaging : Reel
Rated Repetitive Off-State Voltage VDRM : 800 V
Off-State Leakage Current @ VDRM IDRM : 0.1 mA
Holding Current (Ih Max) : 10 mA
Package / Case : TO-92
Gate Trigger Voltage (Vgt) : 1.5 V
Gate Trigger Current (Igt) : 7 mA
Breakover Current IBO Max : 13.7 A


Description

The BT131-800D is one member of the BT131 family which is designed as the glass passivated, sensitive gate that can be used in general purpose bidirecti-onal switching and phase control applications, also BT131-800D is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.

The absolute maximum ratings of the BT131-800D can be summarized as:(1)operating junction temperature:125 °C;(2)storage temperature:-40 to 150 °C;(3)average gate power (over any 20 ms period):0.5 W;(4)peak gate power:5 W;(5)peak gate voltage:5 V;(6)peak gate current:2 A;(7)RMS on-state current: 1 A;(8)non-repetitive peak on-state current (t=20 ms):16 A;(9)non-repetitive peak on-state current (t=16.7 ms):17.6 A;(10)thermal resistance:60 K/W;(11)junction to mounting base:80 K/W;(12)thermal resistance junction to ambient:150 K/W.

The information presented in BT131-800D does not form part of any quotation or contract, BT131-800D is believed to be accurate and reliable and may be changed without notice. If you want to know more information such as the electrical characteristics about the BT131-800D, please download the datasheet in www.seekic.com or www.chinaicmart.com.