BT150S-500R

Features: SpecificationsDescriptionThe BT150S-500R is designed as glass passivated, sensitive gate thyristors BT150S-500R in a plastic envelope, suitable for surface mounting, intended for use in general purpose switching and phase control applications. BT150S-500R are intended to be interfaced di...

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SeekIC No. : 004302572 Detail

BT150S-500R: Features: SpecificationsDescriptionThe BT150S-500R is designed as glass passivated, sensitive gate thyristors BT150S-500R in a plastic envelope, suitable for surface mounting, intended for use in ge...

floor Price/Ceiling Price

Part Number:
BT150S-500R
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/30

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Product Details

Description



Features:






Specifications






Description

The BT150S-500R is designed as glass passivated, sensitive gate thyristors BT150S-500R in a plastic envelope, suitable for surface mounting, intended for use in general purpose switching and phase control applications. BT150S-500R are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.

Some limiting values have been concluded into several points of BT150S-500R as follow. The first one is about its repetitive peak off-state voltage which would be 500V. The second one is about its average on-state current which would be 2.5A. The third one is about its RMS on-state current which would be 4A. The fourth one is about its non-repetitive peak on-state current which would be 35A at t=10ms and would be 38A at t=8.3ms. The fifth one is about its I2t for fusing at t=10ms which would be max 6.1 A2s. The sixth one is about its repetitive rate of rise of on-state current after triggering which would be 50 A/s. The seventh one is about its peak gate current which would be max 2A. The eighth one is about its peak gate voltage which would be max 5V. The ninth one is about its peak reverse gate voltage which would be max 5V. The tenth one is about its peak gate power which would be max 5W. The eleventh one is about its average gate power which would be 0.5W over any 20ms period. The twelfth one is about its storage temperature which would be from -40 to 150°C. The thirteenth one is about its operating junction temperature which would be max 125°C.

Also some static characteristics about BT150S-500R. The first one is about its holding current which would be typ 0.1mA and max 6mA. The second one is about its on-state voltage which would be typ 1.23V and max 1.8V. The third one is about BT150S-500R gate trigger voltage which would be typ 0.4V and max 1.5V with condition of Vd=12V and It=0.1A and would be min 0.1V and typ 0.2V with condition of Vd=Vrrm and It=0.1A and Tj=110°C. The fourth one is about BT150S-500R off-state leakage current which would be typ 0.1mA and max 0.5mA. And so on. For more information please contact us.






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