BT151F Selling Leads, Price trend, BT151F DataSheet download, circuit diagram from SeekIC.com

Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDRM, VRRMIT(AV)IT(RMS)ITSMI2tdIT/dtIGMVGMVPGMPG(AV)TstgTj Repetitive peak off-statevoltagesAverage on-state currentRMS on-state currentNon-repetitive peakon-state currentI2t for fusingRepetitive rate of rise ofon-state curren...

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BT151F: Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDRM, VRRMIT(AV)IT(RMS)ITSMI2tdIT/dtIGMVGMVPGMPG(AV)TstgTj Repetitive peak off-statevoltagesAverage on-state currentRMS on-sta...

BT151F Data Sheet

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Part Number:: BT151F
Supply Ability:: 5000

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1~5000

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Upload time: 2024/4/30

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Product Details

Description

Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.			UNIT
V_DRM, V_RRM I_T(AV)I_T(RMS)I_TSMI²t dI_T/dt I_GM V_GM V P_GM P_G(AV) T_stg T_j	Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature	half sine wave; Ths 87 °C all conduction angles half sine wave; Tj = 125 °C prior to surge; with reapplied VDRM(max) t = 10 ms t = 8.3 ms t = 10 ms ITM = 20 A; IG = 50 mA; dIG/dt = 50 mA/ms over any 20 ms period	- - - - - - - - - - - - -40 -	-500 5001	-650 6501	-800 800	V A A A A A2s A/ms A V V W W
				5.7 9 100 110 50 50 2 5 5 5 0.5 150 125

Description

Glass passivated thyristors BT151F in a full pack, plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications of BT151F include motor control, industrial and domestic lighting, heating and static switching.

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BT151F

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