BT258S-800R Selling Leads, Price trend, BT258S-800R DataSheet download, circuit diagram from SeekIC.com

PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDRM,VRRMIT(AV)IT(RMS)ITSMI2tdIT/dtIGMVGMPGMPG(AV)TstgTj Repetitive peak off-state voltagesAverage on-state currentRMS on-state currentNon-repetitive peakon-state currentI2t for fusingRepetitive rate of rise of...

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BT258S-800R: PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDRM,VRRMIT(AV)IT(RMS)ITSMI2tdIT/dtIGMVGMPGMPG(AV)TstgTj Repetitive peak off-state voltagesAverage on-state cu...

BT258S-800R Data Sheet

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Part Number:: BT258S-800R
Supply Ability:: 5000

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SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_DRM,V_RRMI_T(AV) I_T(RMS) I_TSM I²t dI_T/dt I_GM V_GM P_GM P_G(AV) T_stg T_j	Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current I²t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature	full sine wave; T_mb 111 °C full sine wave; T_j = 25 °C prior to surge t = 10 ms t = 8.3 ms t = 10 ms I_TM = 10 A; I_G = 50 A; dI_G/dt = 50 A/ms T2+ G+ T2+ G- T2- G- T2- G+ over any 20 ms period	- - - - - - - - - - - - - -40 -	800 5 8 75 82 28 50 2 5 5 0.5 150 125¹	V A A A A²s A/s A V W W

Description

Passivated,sensitivegatethyristor BT258S-800R in a plastic envelope, suitable for surfacemounting,intendedforusein general purpose switching and phase control applications. BT258S-800R are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.

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