BTS410D2

Features: · Overload protection· Current limitation· Short circuit protection· Thermal shutdown· Overvoltage protection (including load dump)· Fast demagnetization of inductive loads· Reverse battery protection1)· Undervoltage and overvoltage shutdown with auto-restart and hysteresis· CMOS diagnos...

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SeekIC No. : 004303065 Detail

BTS410D2: Features: · Overload protection· Current limitation· Short circuit protection· Thermal shutdown· Overvoltage protection (including load dump)· Fast demagnetization of inductive loads· Reverse batter...

floor Price/Ceiling Price

Part Number:
BTS410D2
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

· Overload protection
· Current limitation
· Short circuit protection
· Thermal shutdown
· Overvoltage protection (including load dump)
· Fast demagnetization of inductive loads
· Reverse battery protection1)
· Undervoltage and overvoltage shutdown with auto-restart and hysteresis
· CMOS diagnostic output
· Open load detection in ON-state
· CMOS compatible input
· Loss of ground and loss of Vbb protection
· Electrostatic discharge (ESD) protection



Application

· mC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
· All types of resistive, inductive and capacitve loads
· Replaces electromechanical relays, fuses and discrete circuits



Specifications

Parameter

Symbol

Values

Unit

Supply voltage (overvoltage protection see page 3) Vbb

43

V

Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V
RI3)= 2 , RL= 5.3 , td= 200 ms, IN= low or high
VLoad dump4)

100

V

Load current (Short circuit current, see page 4) IL

self-limited

A

Operating temperature range
Storage temperature range
Tj
Tstg

-40 ...+150
-55 ...+150

°C

Power dissipation (DC), TC 25 °C Ptot

50

W

Inductive load switch-off energy dissipation, single pulse
Vbb =12V, Tj,start =150°C, TC =150°C const.
                                                      IL = 2.3 A, ZL = 98 mH, 0 :
EAS

4.5

J

Electrostatic discharge capability (ESD)                                IN:
(Human Body Model)                                            all other pins:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
VESD

1
2

kV

Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 6
VIN
IIN
IST

-0.5 ... +6
±5.0
±5.0

V
mA




Description

N channel vertical power FET BTS410D2 with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOSâ technology. Fully protected by embedded protection functions.


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