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Part Number: BTS410E2
Description: N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolit...


Description: N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolit...
| Parameter | Symbol | Values | Unit |
| Supply voltage (overvoltage protection see page 3) | Vbb |
65 |
V |
| Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V RI= 2, RL= 6.6, td= 400 ms, IN= low or high |
VLoaddump4) |
100 |
V |
| Load current (Short-circuit current, see page 4) | IL |
self-limited |
A |
| Operating temperature range Storage temperature range |
Tj Tstg |
-40 ...+150 -55 ...+150 |
°C |
| Power dissipation (DC),TC25 | Ptot |
50 |
W |
| Inductive load switch-off energy dissipation, single pulse Vbb =12V, Tj,start =150°C, TC = 150°C const. IL = 1.8 A, ZL = 2.3 H, 0 : |
EAS | 4.5 | J |
| Electrostatic discharge capability (ESD) IN: (Human Body Model) all other pins: acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 |
VESD |
1 2 |
kV |
| Input voltage (DC) Current through input pin (DC) Current through status pin (DC) see internal circuit diagrams page 6 |
VIN IIN IST |
-0.5 ... +6 ±5.0 ±5.0 |
V mA |
BTS410E2
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