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MFG:BB


Part Number: BTS621L1
MFG: BB
Description: N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolit...
MFG:BB


MFG: BB
Description: N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolit...
| Parameter | Symbol | Values | Unit |
| Supply voltage (overvoltage protection see page 4) | Vbb |
43 |
V |
| Supply voltage for full short circuit protection Tj,start =-40 ...+150°C |
Vbb |
34 |
V |
| Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V RI3)= 2 , RL= 2.7 , td= 200 ms, IN= low or high |
VLoad dump4) | 60 | V |
| Load current (Short-circuit current, see page 5) | IL | self-limited | A |
| Operating temperature range Storage temperature range |
Tj Tstg |
-40 ...+150 -55 ...+150 |
°C |
| Power dissipation (DC),TC 25°C: | Ptot |
75 |
W |
| Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150°C, TC = 150°C const. one channel, IL = 4.4 A, ZL = 32 mH, 0 : both channels parallel, IL = 8.5 A, ZL = 17 mH, 0 : see diagrams on page 9 |
EAS |
395 |
mJ |
| Electrostatic discharge capability (ESD) IN: (Human Body Model) all other pins: acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 |
VESD |
1.0 2.0 |
kV |
| Input voltage (DC) Current through input pin (DC) Current through status pin (DC) see internal circuit diagram page 7 |
VIN IIN IST |
-10...+16 |
V |
BTS621L1
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