BTS712N1

Power Switch ICs - POE / LAN SMART 4-CH HI-SIDE PWR SWITCH

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SeekIC No. : 00629072 Detail

BTS712N1: Power Switch ICs - POE / LAN SMART 4-CH HI-SIDE PWR SWITCH

floor Price/Ceiling Price

US $ 1.66~2.55 / Piece | Get Latest Price
Part Number:
BTS712N1
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~490
  • 490~500
  • 500~1000
  • 1000~2000
  • Unit Price
  • $2.55
  • $2.07
  • $1.74
  • $1.66
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2021/1/23

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Product Details

Quick Details

On Resistance (Max) : 0.165 Ohms Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : DSO-20    

Description

Crosstalk :
Bandwidth :
On Time (Max) :
Off Time (Max) :
Switch Voltage (Max) :
Operating Supply Voltage :
Number of Switches :
Switch Configuration :
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Package / Case : DSO-20
On Resistance (Max) : 0.165 Ohms


Features:

• Overload protection
• Current limitation
• Short-circuit protection
• Thermal shutdown
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown with auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in OFF-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection



Application

• C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitive loads
• Replaces electromechanical relays and discrete circuits



Pinout

  Connection Diagram


Specifications

Parameter

Symbol

Values

Unit

Supply voltage (overvoltage protection see page 4) Vbb

43

V

Supply voltage for full short circuit protection
Tj,start =-40 ...+150°C
Vbb

34

V
Load current (Short-circuit current, see page 5) IL

self-limited

A

Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V
RI3) = 2 , td = 200 ms; IN= low or high,
each channel loaded with RL = 7.1,
VLoad dump4)

60

V

Operating temperature range
Storage temperature range
Tj
Tstg

-40 ...+150
-55 ...+150

°C
Power dissipation (DC)5                         Ta = 25°C:
(all channels active)                           Ta = 85°C:
Ptot

3.6
1.9

W

Inductive load switch-off energy dissipation, single pulse
Vbb =12V, Tj,start =150°C5),
IL = 1.9 A, ZL = 66 mH, 0                    one channel:
IL = 2.8 A, ZL = 66 mH, 0          two parallel channels:
IL = 4.4 A, ZL = 66 mH, 0         four parallel channels:
see diagrams on page 9 and page 10
EAS

150
320
800

mJ

Electrostatic discharge capability (ESD)
(Human Body Model)
VESD

1.0

kV

Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagram page 9
VIN
IIN
IST
-10 ... +16
±2.0
±5.0
V
mA
Thermal resistance
junction - soldering point5),6)             each channel:
junction - ambient5)                  one channel active:
                                     all channels active:
Rthjs
Rthja
16
44
35
K/W



Description

N channel vertical power FET BTS712N1 with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions.


Parameters:

Technical/Catalog InformationBTS712N1
VendorInfineon Technologies
CategoryIntegrated Circuits (ICs)
Package / CaseDSO-20
Mounting TypeSurface Mount
TypeHigh Side
Voltage - Supply5 V ~ 34 V
On-State Resistance165 mOhm
Current - Output / Channel1.9A
Current - Peak Output7.5A
PackagingTape & Reel (TR)
Input TypeNon-Inverting
Number of Outputs4
Operating Temperature-40°C ~ 150°C
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BTS712N1
BTS712N1



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