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Part Number: BTS707

 

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Description: N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolit...


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BTS707 General Description


N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection functions.

BTS707 Maximum Ratings

Parameter Symbol Values Unit
Supply voltage (overvoltage protection see page 4) Vbb
65
V
Supply voltage for full short circuit protection
Tj,start =-40 ...+150°C
Vbb

40

V

Load current (Short-circuit current, see page 5) IL self-limited A
Operating temperature range
Storage temperature range
Tj
Tstg
-40 ...+150
-55 ...+150
°C
Power dissipation (DC)2)                       Ta = 25°C:
(all channels active)                          Ta = 85°C:
Ptot
3
1.6
W
Electrostatic discharge capability (ESD)            IN,ST:
(Human Body Model)                         all other pins:
VESD
1.0
tbd(>1.0)
kV
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagram page 7
VIN
IIN
IST

-0.5...+36
±2.0
±5.0

V
mA

BTS707 Features

· Overload protection
· Current limitation
· Short-circuit protection
· Thermal shutdown
· Overvoltage protection
· Fast demagnetization of inductive loads
· Reverse battery protection1)
· Open drain diagnostic output
· Open load detection in OFF-state
· CMOS compatible input
· Loss of ground and loss of Vbb protection
· Electrostatic discharge (ESD) protection

BTS707 Typical Application

` µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
` Most suitable for inductive loads
` Replaces electromechanical relays, fuses and discrete circuits

BTS707 Connection Diagram

BTS707  Connection Diagram

BTS707 datasheet

BTS707
PDF/DataSheet Download

  • Datasheet: BTS707
  • File Size: 166892 KB
  • Manufacturer: SIEMENS [Siemens Semiconductor Group]
  • Click here to Download

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