BTS724G

The BTS724G is a N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology.

Features of the BTS724G are:(1)short circuit protection; (2)overload protection; (3)current limitation; (4)thermal shutdown; (5)overvoltage protection (including load dump) with external resistor; (6)reverse battery protection with external resistor; (7)loss of ground and loss of Vbb protection; (8)electrostatic discharge protection (ESD).The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Power dissipation is higher compared to normal operating conditions due to the voltage drop across the drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited.

The absolute maximum ratings of the BTS724G can be summarized as:(1)current through input pin (DC):±0.3 mA;(2)supply voltage:43V;(3)supply voltage for full short circuit protection:36V;(4)load dump protection:60V;(5)input voltage:-10 to 16V;(6)storage temp:-55 to +150;(7)operating temp:-40 to +150.Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body,or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation.

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