BTS726L1

Type: High Side
Input Type: Non-Inverting
Mounting Type: Surface Mount
Number of Outputs: 2
Packaging: Tape & Reel (TR)
Operating Temperature: -40°C ~ 150°C
Package / Case: 20-SOIC (0.295", 7.50mm Width)
On-State Resistance: 50 mOhm
Current - Output / Channel: 4A
Manufacturer: Infineon Technologies
Voltage - Supply: 5 V ~ 34 V
Series: PROFET®
Current - Peak Output: 25A
Supplier Device Package: P-DSO-20


Features:

· Overload protection
· Current limitation
· Short-circuit protection
· Thermal shutdown
· Overvoltage protection (including load dump)
· Fast demagnetization of inductive loads
· Reverse battery protection1)
· Undervoltage and overvoltage shutdown with auto-restart and hysteresis
· Open drain diagnostic output
· Open load detection in ON-state
· CMOS compatible input
· Loss of ground and loss of Vbb protection
· Electrostatic discharge (ESD) protection


Application

·


Specifications

Parameter	Symbol	Values	Unit
Supply voltage (overvoltage protection see page 4)	Vbb	43	V
Supply voltage for full short circuit protection Tj,start =-40 ...+150°C	Vbb	34	V
Load current (Short-circuit current, see page 5)	IL	self-limited	A
Load dump protection2) VLoadDump = UA + Vs, UA = 13.5V RI3)= 2,td= 200 ms, IN= low or high each channel loaded with RL = 3.4,	VLoaddump4)	60	V
Operating temperature range Storage temperature range	Tj Tstg	-40 ...+150 -55 ...+150	°C
Power dissipation (DC)5                       Ta = 25°C: (all channels active)                         Ta = 85°C:	Ptot	3.7 1.9	W
Inductive load switch-off energy dissipation, single pulse Vbb =12V, Tj,start =150°C5), IL = 4.0 A, ZL = 50 mH, 0                  one channel: IL = 6.0 A, ZL = 42 mH, 0        two parallel channels: see diagrams on page 9 and page 10	EAS	0.5 1.0	J
Electrostatic discharge capability (ESD) (Human Body Model)	VESD	1.0	kV
Input voltage (DC) Current through input pin (DC) Current through status pin (DC) see internal circuit diagram page 8	VIN IIN IST	-10...+16 ±2.0 ±5.0	mA
Thermal resistance junction - soldering point5),6)             each channel: junction - ambient5)                 one channel active:                                    all channels active:	Rthjs Rthja	12 41 34	K/W

Description

N channel vertical power FET BTS726L1 with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS^® technology. Fully protected by embedded protection functions.


Parameters:

Technical/Catalog Information	BTS726L1
Vendor	Infineon Technologies
Category	Integrated Circuits (ICs)
Package / Case	DSO-20
Mounting Type	Surface Mount
Type	High Side
Voltage - Supply	5 V ~ 34 V
On-State Resistance	50 mOhm
Current - Output / Channel	4A
Current - Peak Output	25A
Packaging	Tape & Reel (TR)
Input Type	Non-Inverting
Number of Outputs	2
Operating Temperature	-40°C ~ 150°C
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BTS726L1 BTS726L1