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Part Number: BTS728L2
Description: • N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedba...


Description: • N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedba...
| Parameter | Symbol | Values | Unit |
| Supply voltage (overvoltage protection see page 4) | Vbb |
43 |
V |
| Supply voltage for full short circuit protection Tj,start =-40 ...+150°C |
Vbb |
24 |
V |
| Load current (Short-circuit current, see page 5) | IL |
self-limited |
A |
| Load dump protection1) VLoadDump = UA + Vs, UA = 13.5 V RI2)= 2,td= 200 ms, IN= low or high each channel loaded with RL = 8.0, |
VLoaddump3) |
60 |
V |
| Operating temperature range Storage temperature range |
Tj Tstg |
-40 ...+150 -55 ...+150 |
°C |
| Power dissipation (DC)4) Ta = 25°C: (all channels active) Ta = 85°C: |
Ptot |
3.7 1.9 |
W |
| Maximal switchable inductance, single pulse Vbb =12V, Tj,start =150°C4), IL = 4.0A, EAS = 220mJ, 0 one channel: IL = 6.0A, EAS = 540mJ, 0 two parallel channels: |
ZL |
19.9 |
mH |
| Electrostatic discharge capability (ESD) IN: (Human Body Model) ST: out to all other pins shorted: acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 R=1.5k; C=100pF |
VESD |
1.0 4.0 8.0 |
kV |
| Input voltage (DC) Current through input pin (DC) Current through status pin (DC) see internal circuit diagram page 8 |
VIN IIN IST |
-10 ... +16 ±2.0 ±5.0 |
V mA |
BTS728L2
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