BTS7710GP

Number of Switches :
Switch Configuration :
On Resistance (Max) :
Crosstalk :
Bandwidth :
On Time (Max) :
Off Time (Max) :
Switch Voltage (Max) :
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Operating Supply Voltage : 3.2 V to 42 V
Package / Case : P-TO-263-15


Features:

• Quad D-MOS switch driver
• Free configurable as bridge or quad-switch
• Optimized for DC motor management applications
• Low R_DSON: 70 m high-side switch, 40 m low-side switch (typical values @ 25)
• Maximum peak current: typ. 15 A @ 25
• Very low quiescent current: typ. 5 A @ 25
• Small outline, thermal optimized PowerPak
• Load and GND-short-circuit-protection
• Operates up to 40 V
• Status flag diagnosis
• Overtemperature shut down with hysteresis
• Internal clamp diodes
• Isolated sources for external current sensing
• Under-voltage detection with hysteresis
• PWM frequencies up to 50 kHz


Pinout




Specifications

Parameter	Symbol	Limit Values		Unit	Remarks
		min.	max.
High-Side-Switches (Pins DHVS, IH1,2 and SH1,2)
Supply voltage	VS	0.3	42	V
Supply voltage for full short circuit protection	VS(SCP)		28	V
HS-drain current	IS	10	*	A	TC = 125°C; DC
HS-input current	IIH	5	5	mA	Pin IH1 and IH2
HS-input voltage	VIH	10	16	V	Pin IH1 and IH2
Note: * internally limited
Status Output ST
Status pull up voltage	VST	0.3	5.4	V
Status Output current	IST	5	5	mA	Pin ST
Low-Side-Switches (Pins DL1,2, IL1,2 and SL1,2)
Drain- source break down voltage	VDSL	55		V	VIL = 0 V; ID 1 mA
LS-drain current	IDL	12	12	A	TC = 125°C; DC
LS-drain current TC = 85°C	IDL		20	A	t < 100 ms; > 0.1
			30	A	t < 1 ms; < 0.1
LS-input voltage	VIL	20	20	V	Pin IL1 and IL2
Temperatures
Junction temperature	Tj	40	150	C
Storage temperature	Tstg	55	150	C
Thermal Resistances (one HS-LS-Path active)
LS-junction case	RthjCL		1.7	K/W
HS-junction case	RthjCH		1.7	K/W
Junction ambient Rthja = Tj(HS)/(P(HS)+P(LS))	Rthja		26	K/W	device soldered to reference PCB with 6 cm2 cooling area
ESD Protection (Human Body Model acc. MIL STD 883D, method 3015.7 and EOS/ ESD assn. standard S5.1 - 1993)
Input LS-Switch	VESD		0.5	kV
Input HS-Switch	VESD		1	kV
Status HS-Switch	VESD		2	kV
Output LS and HS-Switch	VESD		8	kV	all other pins connected to Ground
Note: Maximum ratings are absolute ratings; exceeding any one of these values may cause irreversible damage to the integrated circuit.

Description

The BTS 7710 GP is part of the TrilithIC family containing three dies in one package: One double high-side switch and two low-side switches. The drains BTS7710GP of these three vertical DMOS chips are mounted on separated leadframes. The sources are connected to individual pins, so the BTS 7710 GP can be used in H-bridge- as well as in any other configuration. The double high-side is manufactured in SMART SIPMOS® technology which combines low RDS ON vertical DMOS power stages with CMOS control circuitry. The high-side switch of BTS7710GP is fully protected and contains the control and diagnosis circuitry. To achieve low RDS ON and fast switching performance, the low-side switches are manufactured in S-FET logic level technology. The equivalent standard product of BTS7710GP is the BUZ 103 SL.

In contrast to the BTS 7710 G, which consists of the same chips in an P-DSO-28 package, the P-TO263-15-1 PowerPack offers a much lower thermal resistance, which opens up applications with even higher currents in the automotive and industrial area.