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MFG:946  Package Cooled:Infineon  

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Part Number: BTS7710GP

 

MFG: 946

Package Cooled: Infineon

 

Description: The BTS 7710 GP is part of the TrilithIC family containing three dies in one package: One double high-side switch and t...


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BTS7710GP General Description


The BTS 7710 GP is part of the TrilithIC family containing three dies in one package: One double high-side switch and two low-side switches. The drains of these three vertical DMOS chips are mounted on separated leadframes. The sources are connected to individual pins, so the BTS 7710 GP can be used in H-bridge- as well as in any other configuration. The double high-side is manufactured in SMART SIPMOS® technology which combines low RDS ON vertical DMOS power stages with CMOS control circuitry. The high-side switch is fully protected and contains the control and diagnosis circuitry. To achieve low RDS ON and fast switching performance, the low-side switches are manufactured in S-FET logic level technology. The equivalent standard product is the BUZ 103 SL.

In contrast to the BTS 7710 G, which consists of the same chips in an P-DSO-28 package, the P-TO263-15-1 PowerPack offers a much lower thermal resistance, which opens up applications with even higher currents in the automotive and industrial area.

BTS7710GP Maximum Ratings

Parameter Symbol Limit Values Unit Remarks
min. max.
High-Side-Switches (Pins DHVS, IH1,2 and SH1,2)
Supply voltage VS 0.3 42 V
Supply voltage for full short circuit protection VS(SCP)   28 V
HS-drain current IS 10 * A TC = 125°C; DC
HS-input current IIH 5 5 mA Pin IH1 and IH2
HS-input voltage VIH 10 16 V Pin IH1 and IH2
Note: * internally limited
Status Output ST
Status pull up voltage VST 0.3 5.4 V
Status Output current IST 5 5 mA Pin ST
Low-Side-Switches (Pins DL1,2, IL1,2 and SL1,2)
Drain- source break down voltage
 VDSL 55 V VIL = 0 V; ID 1 mA
LS-drain current IDL 12 12 A TC = 125°C; DC
LS-drain current
TC = 85°C		 IDL 20 A t < 100 ms; > 0.1
30 A t < 1 ms; < 0.1
LS-input voltage VIL 20 20 V Pin IL1 and IL2
Temperatures
Junction temperature Tj 40 150 C
Storage temperature Tstg 55 150 C
Thermal Resistances (one HS-LS-Path active)
LS-junction case RthjCL 1.7 K/W  
HS-junction case RthjCH 1.7 K/W  
Junction ambient
Rthja = Tj(HS)/(P(HS)+P(LS))		 Rthja 26 K/W device soldered to reference PCB with 6 cm2 cooling area
ESD Protection (Human Body Model acc. MIL STD 883D, method 3015.7 and EOS/ ESD assn. standard S5.1 - 1993)
Input LS-Switch VESD 0.5 kV  
Input HS-Switch VESD 1 kV  
Status HS-Switch VESD 2 kV  
Output LS and HS-Switch VESD 8 kV all other pins connected to Ground
Note: Maximum ratings are absolute ratings; exceeding any one of these values may cause irreversible damage to the integrated circuit.

BTS7710GP Features

• Quad D-MOS switch driver
• Free configurable as bridge or quad-switch
• Optimized for DC motor management applications
• Low RDSON: 70 m high-side switch, 40 m low-side switch (typical values @ 25)
• Maximum peak current: typ. 15 A @ 25
• Very low quiescent current: typ. 5 A @ 25
• Small outline, thermal optimized PowerPak
• Load and GND-short-circuit-protection
• Operates up to 40 V
• Status flag diagnosis
• Overtemperature shut down with hysteresis
• Internal clamp diodes
• Isolated sources for external current sensing
• Under-voltage detection with hysteresis
• PWM frequencies up to 50 kHz

BTS7710GP Connection Diagram

BTS7710GP Connection Diagram

BTS7710GP datasheet

BTS7710GP
PDF/DataSheet Download

  • Datasheet: BTS7710GP
  • File Size: 244176 KB
  • Manufacturer: INFINEON [Infineon Technologies AG]
  • Click here to Download

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