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BTS7904B: MOSFET OptiMOS-T PN 1/2Brdg Dual p/n-ch MOSFET

BTS7904B Data Sheet

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Part Number:: BTS7904B
Mfg:: Infineon Technologies
Supply Ability:: 5000

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Upload time: 2024/4/25

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Transistor Polarity :	N and P-Channel	Drain-Source Breakdown Voltage :	55 V at N Chaneel, 30 V at P Channel
Continuous Drain Current :	40 A	Resistance Drain-Source RDS (on) :	11.7 mOhms at N Channel, 12.7 mOhms at P Channel
Configuration :	Dual	Maximum Operating Temperature :	+ 150 C
Package / Case :	TO-263	Packaging :	Reel

Description

Gate-Source Breakdown Voltage :
Mounting Style :
Packaging : Reel
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 40 A
Configuration : Dual
Transistor Polarity : N and P-Channel
Package / Case : TO-263
Drain-Source Breakdown Voltage : 55 V at N Chaneel, 30 V at P Channel
Resistance Drain-Source RDS (on) : 11.7 mOhms at N Channel, 12.7 mOhms at P Channel

Parameters:

Technical/Catalog Information	BTS7904B
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N and P-Channel
Drain to Source Voltage (Vdss)	55V, 30V
Current - Continuous Drain (Id) @ 25° C	40A
Rds On (Max) @ Id, Vgs	11.7 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds	6100pF @ 25V
Power - Max	69W, 96W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	121nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (5 leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BTS7904B BTS7904B

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BTS7904B

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