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BTS7904S: MOSFET MOSFET

BTS7904S Data Sheet

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Part Number:: BTS7904S
Mfg:: Infineon Technologies
Supply Ability:: 5000

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Upload time: 2024/4/26

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Product Details

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Transistor Polarity :	N and P-Channel	Drain-Source Breakdown Voltage :	55 V at N Chaneel, 30 V at P Channel
Continuous Drain Current :	40 A	Resistance Drain-Source RDS (on) :	9.7 mOhms at N Channel, 7.2 mOhms at P Channel
Configuration :	Dual	Maximum Operating Temperature :	+ 150 C
Package / Case :	TO-220	Packaging :	Tube

Description

Gate-Source Breakdown Voltage :
Mounting Style :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 40 A
Package / Case : TO-220
Configuration : Dual
Transistor Polarity : N and P-Channel
Drain-Source Breakdown Voltage : 55 V at N Chaneel, 30 V at P Channel
Resistance Drain-Source RDS (on) : 9.7 mOhms at N Channel, 7.2 mOhms at P Channel

Parameters:

Technical/Catalog Information	BTS7904S
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N and P-Channel
Drain to Source Voltage (Vdss)	55V, 30V
Current - Continuous Drain (Id) @ 25° C	40A
Rds On (Max) @ Id, Vgs	12 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds	6100pF @ 25V
Power - Max	69W, 96W
Packaging	Tube
Gate Charge (Qg) @ Vgs	123nC @ 10V
Package / Case	TO-220-5
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BTS7904S BTS7904S

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BTS7904S

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