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Part Number: BTS 149

 

 

 

 

Description: N channel vertical power FET in Smart SIPMOS® chip on chip technology. Fully protected by embedded protected functi...


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BTS 149 General Description


N channel vertical power FET in Smart SIPMOS® chip on chip technology. Fully protected by embedded protected functions.

BTS 149 Maximum Ratings

Parameter Symbol Value Unit
Drain source voltage VDS 60 V
Drain source voltage for short circuit protection VDS(SC) 32
Continuous input current 1)
-0.2V  VIN 10V
VIN < -0.2V or VIN > 10V
IIN



no limit
| IIN |  2
mA

Operating temperature Tj - 40 ... +150 °C
Storage temperature Tstg - 55 ... +150
Power dissipation
TC = 25 °C
Ptot 178 W
Unclamped single pulse inductive energy
ID(ISO) = 19 A
EAS 6000 mJ
Electrostatic discharge voltage (Human Body Model)
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993
VESD 3000 V
Load dump protection VLoadDump2) = VA + VS
VIN=low or high; VA=13.5 V
td = 400 ms, RI = 2 , ID=0,5*19A
td = 400 ms, RI = 2 , ID= 19A
VLD









110
92
DIN humidity category, DIN 40 040
  E  
IEC climatic category; DIN IEC 68-1   40/150/56  

BTS 149 Features

· Logic Level Input
· Input Protection (ESD)
· Thermal Shutdown
· Overload protection
· Short circuit protection
· Overvoltage protection
· Current limitation
· Status feedback with external input resistor
· Analog driving possible

BTS 149 Typical Application

` All kinds of resistive, inductive and capacitive loads in switching or linear applications
` C compatible power switch for 12 V and 24 V DC applications
` Replaces electromechanical relays and discrete circuits

BTS 149 datasheet

BTS100
PDF/DataSheet Download

  • Datasheet: BTS100
  • File Size: 447180 KB
  • Manufacturer: SIEMENS [Siemens Semiconductor Group]
  • Click here to Download

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