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Part Number: BTS 4140 N

 

 

 

 

Description: N channel vertical power MOSFET with charge pump and current controlled input, monolithically integrated in Smart SIPMO...


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BTS 4140 N General Description


N channel vertical power MOSFET with charge pump and current controlled input, monolithically integrated in Smart SIPMOS® technology.

Providing embedded protective functions.

BTS 4140 N Maximum Ratings

Parameter
at Tj= 25°C, unless otherwise specified
Symbol
Value
Unit
Supply voltage Vbb
60
V
Load current (Short - circuit current, see page 5) IL
self limited
A
Maximum current through the input pin ( DC ) IIN
±15
mA
Operating temperature Tj
-40 ...+150
°C
Storage temperature Tstg
-55 ... +150
Power dissipation1)
TA = 25 °C

 Ptot
1.7
W
Inductive load switch-off energy dissipation2)
single pulse
Tj= 150 °C, IL = 0.15 A
 EAS
1
J
Load dump protection3) VLoadDump4)= VA + VS
RI=2Ω, td=400ms, VIN= low or high
IL = 150 mA, Vbb = 13,5 V
Vbb = 27 V


 VLoaddump
93.5
127
V
Electrostatic discharge voltage (Human Body Model)
according to ANSI EOS/ESD - S5.1 - 1993
ESD STM5.1 - 1998
Input pin
all other pins

VESD





 
±1
±5
kV

BTS 4140 N Features

•Current controlled input
•Short circuit protection
•Current limitation
•Overload protection
•Overvoltage protection (including load dump)
•Switching inductive loads
•Clamp of negative voltage at output
  with inductive loads
•Thermal shutdown with restart
•ESD - Protection
•Loss of GND and loss of Vbb protection
•Very low standby current
•Reverse battery protection
•Improved electromagnetic compatibility (EMC)

BTS 4140 N Typical Application

•All types of resistive, inductive and capacitive loads
•Current controlled power switch for 12V, 24V and 42V DC applications
•Driver for electromechanical relays
•Signal amplifier

BTS 4140 N datasheet

BTS100
PDF/DataSheet Download

  • Datasheet: BTS100
  • File Size: 447180 KB
  • Manufacturer: SIEMENS [Siemens Semiconductor Group]
  • Click here to Download

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