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Part Number: BTS 707

 

 

 

 

Description: N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic ...


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BTS 707 General Description


N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic eedback, monolithically integrated in Smart SIPMOS®technology.

Providing embedded protective functions.

BTS 707 Maximum Ratings

Parameter
Symbol
Values
Unit
Supply voltage (overvoltage protection see page 4)
Vbb
65
V
Supply voltage for full short circuit protection
Tj,start =-40 ...+150°C
Vbb
40
V
Load current (Short-circuit current, see page 5)
IL
self-limited
A
Operating temperature range
Storage temperature range
Tj
Tstg
-40 ...+150
-55 ...+150
Power dissipation (DC)2) Ta = 25°C:
(all channels active) Ta = 85°C:
Ptot
3
1.6
W
Electrostatic discharge capability (ESD)    IN, ST:
(Human Body Model)                     all other pins:
VESD
1.0
1.0
kV
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagram page 7
VIN
IIN
IST
-0.5 ... +36
±2.0
±5.0
V
mA

BTS 707 Features


• Overload protection
• Current limitation
• Short-circuit protection
• Thermal shutdown
• Overvoltage protection
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Open drain diagnostic output
• Open load detection in OFF-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection

BTS 707 Typical Application

• C compatible power switch with diagnostic feedback or 12 V and 24 V DC grounded loads
• Most suitable for inductive loads
• Replaces electromechanical relays, fuses and discrete circuits

BTS 707 Connection Diagram

BTS 707  Connection Diagram

BTS 707 datasheet

BTS100
PDF/DataSheet Download

  • Datasheet: BTS100
  • File Size: 447180 KB
  • Manufacturer: SIEMENS [Siemens Semiconductor Group]
  • Click here to Download

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