Purchase BTS 716G, In-stock BTS 716G From SeekIC.
Part Number: BTS 716G
Description: • N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and iagnostic feedbac...
- Table of contents:
BTS 716G
-
Suppliers
DataSheet
General Description
BTS 716G General Description
• N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and iagnostic feedback, monolithically integrated in Smart SIPMOS® technology.
• Providing embedded protective functions
BTS 716G Maximum Ratings
| Parameter |
Symbol |
Values |
Unit |
| Supply voltage (overvoltage protection see page 6) |
Vbb |
43 |
V |
| Supply voltage for full short circuit protection Tj,start =-40 ...+150°C |
Vbb |
36 |
V |
| Load current (Short-circuit current, see page 6) |
IL |
self-limited |
A |
| Load dump protection1) VLoadDump = VA + Vs, VA = 13.5 V RI2) = 2 , td = 400 ms; IN= low or high, each channel loaded with RL = 13.5 , |
VLoaddump3) |
60 |
V |
| Operating temperature range Storage temperature range |
Tj stg |
-40 ...+150 -55 ...+150 |
|
| Power dissipation (DC)4) Ta = 25°C: (all channels active) Ta = 85°C: |
Ptot |
3.6 1.9 |
W |
| Maximal switchable inductance, single pulse Vbb =12V, Tj,start =150°C4), see diagrams on page 10 IL = 2.3 A, EAS = 76 mJ, 0 one channel: IL = 3.3 A, EAS = 182 mJ, 0 two parallel channels: IL = 4.7 A, EAS = 460 mJ, 0 four parallel channels: |
ZL |
21 25 30 |
mH |
| Electrostatic discharge capability (ESD) IN: (Human Body Model) ST: out to all other pins shorted: acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 R=1.5k; C=100pF |
VESD |
1.0 4.0 8.0 |
kV |
| Input voltage (DC) see internal circuit diagram page 9 Current through input pin (DC) Pulsed current through input pin5) Current through status pin (DC) |
VIN IIN IIN IST |
-10 ... +16 ±0.3 ±5.0 ±5.0 |
V mA |
BTS 716G Typical Application
• µC compatible high-side power switch with diagnostic feedback for 12V and 24V grounded loads
• All types of resistive, inductive and capacitve loads
• Most suitable for loads with high inrush currents, so as lamps
• Replaces electromechanical relays, fuses and discrete circuits
• All types of resistive, inductive and capacitve loads
• Most suitable for loads with high inrush currents, so as lamps
• Replaces electromechanical relays, fuses and discrete circuits
BTS 716G Connection Diagram
BTS100
PDF/DataSheet Download
- Datasheet: BTS100
- File Size: 447180 KB
- Manufacturer: SIEMENS [Siemens Semiconductor Group]
- Click here to Download
- ·BTS110
- INFINEON [Infineon Technologies AG]
- TEMPFET(N-channel Enhancement mode Temperature sensor with thyristor characteristic)
- 574041 KB
- ·BTS112
- SIEMENS [Siemens Semiconductor Group]
- TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)
- 327460 KB
- ·BTS112A
- INFINEON [Infineon Technologies AG]
- TEMPFET(N-channel Enhancement mode Temperature sensor with thyristor characteristic)
- 593185 KB
- ·BTS113
- SIEMENS [Siemens Semiconductor Group]
- TEMPFET (N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic)
- 316535 KB
- ·BTS113A
- INFINEON [Infineon Technologies AG]
- TEMPFET(N-channel Logic level Enhancement mode Temperature sensor with thyristor characteristic)
- 561964 KB
- ·BTS114
- INFINEON [Infineon Technologies AG]
- TEMPFET(N channel Enhancement mode Temperature sensor with thyristor characteristic)
- 589015 KB
- ·BTS114A
- INFINEON [Infineon Technologies AG]
- TEMPFET(N channel Enhancement mode Temperature sensor with thyristor characteristic)
- 589015 KB
- ·BTS115A
- INFINEON [Infineon Technologies AG]
- TEMPFET(N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic)
- 559930 KB
BTS 716G Relative Products
BTS 707
N channel vertical power FET BTS 707 with charge pump, ground referenced CMOS compatible input and diagnostic eedback, monolithically integrated in Smart SIPMOS®technology.The BTS 707 is providing embedded protective functions.
BTS 441 T
The BTS 441 T features are as follows: •N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically integrated in Smart SIPMOS®technology. •Providing embedded protective functions.
BTS 441 R
The BTS 441 R features are as follows: •N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically integrated in Smart SIPMOS® technology. •Providing embedded protective functions.
BTS 4140 N
N channel vertical power MOSFET BTS 4140 N with charge pump and current controlled input, monolithically integrated in Smart SIPMOS® technology.The BTS 4140 N is providing embedded protective functions.
BTS 240A
BTS 149
N channel vertical power FET in Smart SIPMOS® chip BTS 149 on chip technology. Fully protected by embedded protected functions.
Hotspot Suppliers Product
BD4913-V4
Price: 3-4 USD
Low Current Consumption MOS System Power Supply
EKMM161VSN182MR45S
Price: 0.01-100 USD
aluminum electrolytic capacitor, 160 to 400V, 1800 uF, EKMM161VSN182MR45S
CM150DU-24F
Price: 90-100 USD
IGBT MODULES, HIGH POWER SWITCHING USE, 1200V, 150A, 2-elements in a pack, 600W collector dissipat...
PALCE22V10Q-25PC4
Price: 0.1-0.5 USD
24-Pin, EE CMOS, Versatile PAL Device, DIP, -0.5 V to +7.0 V, 100 mA, PALCE22V10Q-25PC4
AT28C64B-15PU
Price: 1-1 USD
programmable read only memory, DIP28, -0.6V to +6.25V, Low Power Dissipation
S29AL016D70TAI02
Price: 1.55-1.58 USD
48-ball TSSOP, 16 MEGABIT, CMOS, FLASH MEMORY, 16 Mbit, 3.0 Volt-only, –0.5 V to +12.5 V
HD64F2134FA20V
Price: 6-10 USD
16-Bit, Single-Chip Microcomputer, QFP, -0.3 to +7.0V, Renesas
AD625AD
Price: 1-8 USD
precision instrumentation amplifier, 25MHZ, 16CDIP, 25 μV, 450 mW, AD625AD
LM2594M-ADJ
Price: 0.65-1.15 USD
Simple switcher, 8-SOIC, 150 kHz, 0.5A, 45V
AXK7L30227BG
Price: 0.2-0.4 USD
narrow-pitch connector, Strong resistance, 0.3A/terminal , Max. 90mΩ, Panasonic
ISL6232CAZ
Price: 3-4 USD
Power Supply Controller, SOP, 5.5V to 25V
K4J52324QC-BC14
Price: 4-5 USD
512Mbit, GDDR3 SDRAM, BGA, On-Die Termination, 1.8V inputs/outputs
