MFG:Other Category:Other
Category: Other
MFG: Other
Description: The features of BTS 770 are as follows:(1)free configurable as bridge or quad-switch; (2)optimized for DC motor managemen...
The features of BTS 770 are as follows:(1)free configurable as bridge or quad-switch; (2)optimized for DC motor management applications; (3)ultra low RDSON @ 25 : high-side switch: typ. 165 m; low-side switch: typ. 55 m; (4)very high peak current capability; (5)very low quiescent current; (6)space- and thermal optimized power P-DSO-Package; (7)operates up to 40 V; (8)load/GND-short-circuit-protected.
What comes next is about the maximum ratings of BTS 770 : (1)supply voltage: 0.3V to 43 V; (2)junction temperature: 40°C to 150 °C.
The following is about the electrical characteristics of BTS 770:(1)quiescent current: 35 A max at VS = 13.2 V; (2)RDSO; bridge in path: 200 m typical and 500 m max; (3)RDSON; High-Side-Switch: 165 m typical and 220 m max at Tj = 25 °C; (4)RDSON; Low-Side-Switch : 45m typical and 65 m max at Tj = 25 °C; (5)short circuit output current: 5.5A min and 9A at Tj = 85 °C; (6)open load detection current: 10mA min and 200 mA max.
BTS100
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The BTS 716G features are as follows: • N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and iagnostic feedback, monolithically integrated in Smart SIPMOS® technology.• Providing embedded prot...
N channel vertical power FET BTS 707 with charge pump, ground referenced CMOS compatible input and diagnostic eedback, monolithically integrated in Smart SIPMOS®technology.The BTS 707 is providing embedded protective functions.
The BTS 441 T features are as follows: •N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically integrated in Smart SIPMOS®technology. •Providing embedded protective functions.
The BTS 441 R features are as follows: •N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically integrated in Smart SIPMOS® technology. •Providing embedded protective functions.
N channel vertical power MOSFET BTS 4140 N with charge pump and current controlled input, monolithically integrated in Smart SIPMOS® technology.The BTS 4140 N is providing embedded protective functions.
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