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BTS 949
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Part Number: BTS 949

Description: N channel vertical power FET in Smart SIPMOS® chip on chip technology. Fully protected by embedded prote...

BTS 949 General Description

N channel vertical power FET in Smart SIPMOS^®chip on chip technology. Fully protected by embedded protected functions.

BTS 949 Maximum Ratings

Parameter	Symbol	Unit	Value
Drain source voltage	V_DS	60	V
Drain source voltage for short circuit protection R_CC = 0 Ω without R_CC	V_DS(SC)	15 50	V
Continuous input current ¹) -0.2V V_IN 10V V_IN < -0.2V or V_IN> 10V	I_IN	no limit \| I_IN\| 2	mA
Operating temperature	T_j	- 40 ... +150	°C
Storage temperature	T_stg	- 55 ... +150	°C
Power dissipation T_C = 25 °C	P_tot	50	W
Unclamped single pulse inductive energy I_D(ISO) = 19 A	E_AS	1000	mJ
Electrostatic discharge voltage (Human Body Model) according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993	V_ESD	3000	V
Load dump protection V_LoadDump2) = V_A + V_SV_IN=low or high; V_A=13.5 V t_d= 400 ms, R_I= 2 Ω, I_D=0,5*19A t_d = 400 ms, R_I= 2 Ω, I_D= 19A	V_LD	75 70	V
DIN humidity category, DIN 40 040		E
IEC climatic category; DIN IEC 68-1		40/150/56

BTS 949 Features

•Logic Level Input
•Input Protection (ESD)
•Thermal Shutdown
•Overload protection
•Short circuit protection
•Overvoltage protection
•Current limitation
•Maximum current adjustable with external resistor
•Current sense
•Status feedback with external input resistor
•Analog driving possible

BTS 949 Typical Application

•All kinds of resistive, inductive and capacitive loads in switching or
linear applications
•µC compatible power switch for 12 V and 24 V DC applications
•Replaces electromechanical relays and discrete circuits

BTS 949 datasheet

BTS100
PDF/DataSheet Download

Datasheet: BTS100
File Size: 447180 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Click here to Download

·BTS110
INFINEON [Infineon Technologies AG]
TEMPFET(N-channel Enhancement mode Temperature sensor with thyristor characteristic)
574041 KB
·BTS112
SIEMENS [Siemens Semiconductor Group]
TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)
327460 KB
·BTS112A
INFINEON [Infineon Technologies AG]
TEMPFET(N-channel Enhancement mode Temperature sensor with thyristor characteristic)
593185 KB
·BTS113
SIEMENS [Siemens Semiconductor Group]
TEMPFET (N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic)
316535 KB
·BTS113A
INFINEON [Infineon Technologies AG]
TEMPFET(N-channel Logic level Enhancement mode Temperature sensor with thyristor characteristic)
561964 KB
·BTS114
INFINEON [Infineon Technologies AG]
TEMPFET(N channel Enhancement mode Temperature sensor with thyristor characteristic)
589015 KB
·BTS114A
INFINEON [Infineon Technologies AG]
TEMPFET(N channel Enhancement mode Temperature sensor with thyristor characteristic)
589015 KB
·BTS115A
INFINEON [Infineon Technologies AG]
TEMPFET(N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic)
559930 KB

Related Part Number

BTS 949 Relative Products

BTS 917
N channel vertical power FET in Smart SIPMOS® chip BTS 917 on chip technology. Fully protected by embedded protected functions.
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This is the Overview of BTS 7970B: The BTS 7970B is part of the NovalithIC family containing three separate chips in one package: One p-channel highside MOSFET and one n-channel lowside MOSFET together with a driver IC, forming a fully integrated high curre...
BTS 7750 GP
The BTS 7750 GP is part of the TrilithIC family containing three dies in one package: One double high-side switch and two low-side switches. The drains of these three vertical DMOS chips are mounted on separated leadframes. The sources are connected to indiv...
BTS 775 G
The BTS 775 G is a TrilithIC contains one double high-side switch and two low-side switches in one P-DSO-28-9 -Package.
BTS 770
The features of BTS 770 are as follows:(1)free configurable as bridge or quad-switch; (2)optimized for DC motor management applications; (3)ultra low RDSON @ 25 : high-side switch: typ. 165 m; low-side switch: typ. 55 m; (4)very high peak current capability...
BTS 716G
The BTS 716G features are as follows: • N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and iagnostic feedback, monolithically integrated in Smart SIPMOS® technology.• Providing embedded prot...

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