BU208A

DC Collector/Base Gain hfe Min :
Transistor Polarity : NPN
Configuration : Single
Mounting Style : Through Hole
Maximum DC Collector Current : 8 A
Emitter- Base Voltage VEBO : 10 V
Packaging : Bulk
Maximum Operating Temperature : + 175 C
Package / Case : TO-3
Collector- Emitter Voltage VCEO Max : 700 V
Maximum Operating Frequency : 7 MHz


Features:

*Collector-Emitter Sustaining Voltage.
V_CES = 1300 V (Min.) - BU207
= 1500 V (Min.) - BU208
*Glassivated Base-Collector Junction




Specifications

Characteristic	Symbol	BU207	BU208 BU208A	Unit
Collector-Emitter Voltage	VCEO	600	700	V
Collector-Emitter Voltage	VCEX	1300	1500	V
Emitter-Base Voltage	VEBO	5.0		V
Collector Current - Continuous -Peak	IC	5.0 7.5		A
Base Current -Continuous	IB	2.5		A
Total Power Dissipation @TC=25 Derate above 25	PD	55 0.611		W W/
Operating and Storage Junction Temperature Range	TJ,TSTG	-65 to +115

Parameters:

Technical/Catalog Information	BU208A
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	700V
Current - Collector (Ic) (Max)	8A
Power - Max	150W
DC Current Gain (hFE) (Min) @ Ic, Vce	-
Vce Saturation (Max) @ Ib, Ic	1V @ 2A, 4.5A
Frequency - Transition	7MHz
Current - Collector Cutoff (Max)	1mA
Mounting Type	Chassis Mount
Package / Case	TO-204, TO-3
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BU208A BU208A 497 2412 ND 4972412ND 497-2412