BU4522DF

Pinout




Specifications

SYMBOL	PARAMETER	CONDITIONS	TYP.	MAX.	UNIT
VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf	Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current (Fig 17) Diode forward voltage Fall time	VBE = 0 V Ths 25 IC = 7 A; IB = 1.75 A f = 16 kHz f = 64 kHz IF = 7.0 A ICsat = 7 A; f = 16 kHz f = 64 kHz	- - - - - - 7 6 - 285 t.b.f	1500 800 10 25 45 3.0 - - 2.2 400 t.b.f	V V A A W V A A V ns ns

Description

Enhanced performance, new generation, high-voltage, high-speed switching npn transistor BU4522DF with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features of BU4522DF exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.