Transistors Bipolar (BJT) NPN Multiepitaxial Fast Swtch Trnsistr
BU505: Transistors Bipolar (BJT) NPN Multiepitaxial Fast Swtch Trnsistr
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| Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 700 V | ||
| Maximum DC Collector Current : | 2.5 A | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-220 | Packaging : | Tube |
| Symbol | Parameter | Value | Units |
| VCES | Collector-Emitter Voltage (VBE = 0) | 1500 | V |
| VCEO | Collector-Emitter Voltage (IB = 0) | 700 | V |
| IC | Collector Current | 2.5 | A |
| ICM | Collector Peak Current (tp <5ms) | 4 | A |
| IB | Base Peak Current | 1 | W |
| TJ | Max. Operating Junction Temperature | 150 | |
| Ptot | Total Dissipation at Tc 25 C | 75 | W |
| IBM | Base Peak Current (tp < 5 ms) | 2 | A |
| TSTG | Storage Temperature | - 65 ~ 150 |