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MFG:PHI  Package Cooled:TO-220  D/C:06+  

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Part Number: BU505DF

 

MFG: PHI

Package Cooled: TO-220

D/C: 06+

Description: High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 package with electrically isolated mounting...


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BU505DF General Description


High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 package with electrically isolated mounting base. The BU505DF has an integrated efficiency diode.

BU505DF Maximum Ratings

Symbol Parameter  CONDITIONS  MIN. MAX. Units
VCESM  collector-emitter peak voltage  VBE = 0  - 1500 V
VCEO collector-emitter voltage  open base  - 700 V
ICsat collector saturation current    - 2 A
IC collector current (DC)  see Fig.4  - 2.5 A
ICM collector current (peak value)  see Fig.4  - 4 A
IB base current (DC)    - 2 A
IBM base current (peak value)    - 4 A
Ptot total power dissipation  Tmb 25 °C; see Fig.2  - 20 W
Tstg storage temperature    -65 +150
 Tj  junction temperature    -  150  

BU505DF Typical Application

* Horizontal deflection circuits of colour television receivers.

BU505DF datasheet

BU505DF
PDF/DataSheet Download

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