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Part Number: BU506D
Description: High-voltage, high-speed, switching NPN power transistor in a TO-220AB package. The BU506D has an integrated efficiency...


Description: High-voltage, high-speed, switching NPN power transistor in a TO-220AB package. The BU506D has an integrated efficiency...
| Symbol | Parameter | CONDITIONS | MIN. | MAX. | Units |
| VCESM | collector-emitter peak voltage | VBE = 0 | - | 1500 | V |
| VCEO | collector-emitter voltage | open base | - | 700 | V |
| ICsat | collector saturation current | - | 3 | A | |
| IC | collector current (DC) | see Fig.2 | - | 5 | A |
| ICM | collector current (peak value) | see Fig.2 | - | 8 | A |
| IB | base current (DC) | - | 3 | A | |
| IBM | base current (peak value) | - | 5 | A | |
| Ptot | total power dissipation | Tmb 25 °C; see Fig.3 | - | 100 | W |
| Tstg | storage temperature | -65 | +150 | ||
| Tj | junction temperature | - | 150 |
BU506D
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