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MFG:PHI  Package Cooled:TO-220  D/C:06+  

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Part Number: BU506DF

 

MFG: PHI

Package Cooled: TO-220

D/C: 06+

Description: High-voltage, high-speed switching NPN power transistor in a SOT186 package. The BU506DF has an integrated efficiency d...


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BU506DF General Description


High-voltage, high-speed switching NPN power transistor in a SOT186 package. The BU506DF has an integrated efficiency diode.

BU506DF Maximum Ratings

Symbol Parameter  CONDITIONS  MIN. MAX. Units
VCESM  collector-emitter peak voltage  VBE = 0  - 1500 V
VCEO collector-emitter voltage  open base  - 700 V
ICsat collector saturation current  VCE=5V  - 3 A
IC collector current (DC)  see Figs 2 and 3  - 5 A
ICM collector current (peak value)  see Figs 2 and 3  - 8 A
IB base current (DC)    - 3 A
IBM base current (peak value)    - 5 A
Ptot total power dissipation  Tmb 25 °C; see Fig.4  - 20 W
Tstg storage temperature    -65 +150
 Tj  junction temperature    -  150  

BU506DF Typical Application

* Horizontal deflection circuits of colour television receivers
* Line-operated switch-mode applications.

BU506DF datasheet

BU506DF
PDF/DataSheet Download

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Related Part Number

BU506DF Relative Products

  • BU506D

    BU506D

    High-voltage, high-speed, switching NPN power transistor in a TO-220AB package. The BU506D has an integrated efficiency diode.

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    High-voltage, high-speed, switching NPN power transistor in a TO-220AB package. The BU506D has an integrated efficiency diode.

  • BU505F

    BU505F

    High-voltage, high-speed, glass-passivated NPN power transistor BU505F in a SOT186 package with electrically isolated mounting base. The BU505DF has an integrated efficiency diode.

  • BU505DF

    BU505DF

    High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 package with electrically isolated mounting base. The BU505DF has an integrated efficiency diode.

  • BU505D

    BU505D

    High-voltage, high-speed switching NPN power transistor in a TO-220AB package. The BU505D has an integrated efficiency diode.

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