MFG:PHI Package Cooled:TO-220 D/C:06+
MFG: PHI
Package Cooled: TO-220
D/C: 06+
Description: High-voltage, high-speed switching NPN power transistor in a SOT186 package. The BU506DF has an integrated efficiency d...
| Symbol | Parameter | CONDITIONS | MIN. | MAX. | Units |
| VCESM | collector-emitter peak voltage | VBE = 0 | - | 1500 | V |
| VCEO | collector-emitter voltage | open base | - | 700 | V |
| ICsat | collector saturation current | VCE=5V | - | 3 | A |
| IC | collector current (DC) | see Figs 2 and 3 | - | 5 | A |
| ICM | collector current (peak value) | see Figs 2 and 3 | - | 8 | A |
| IB | base current (DC) | - | 3 | A | |
| IBM | base current (peak value) | - | 5 | A | |
| Ptot | total power dissipation | Tmb 25 °C; see Fig.4 | - | 20 | W |
| Tstg | storage temperature | -65 | +150 | ||
| Tj | junction temperature | - | 150 |
BU506F
PDF/DataSheet Download
High-voltage, high-speed switching NPN power transistor in a SOT186 package. The BU506DF has an integrated efficiency diode.
High-voltage, high-speed, switching NPN power transistor in a TO-220AB package. The BU506D has an integrated efficiency diode.
High-voltage, high-speed, switching NPN power transistor in a TO-220AB package. The BU506D has an integrated efficiency diode.
High-voltage, high-speed, glass-passivated NPN power transistor BU505F in a SOT186 package with electrically isolated mounting base. The BU505DF has an integrated efficiency diode.
High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 package with electrically isolated mounting base. The BU505DF has an integrated efficiency diode.
High-voltage, high-speed switching NPN power transistor in a TO-220AB package. The BU505D has an integrated efficiency diode.
Price: 3.5-4.5 USD
24-Bit, 192 kHz Stereo DAC, SOP16, 101 dB Dynamic Range, Low Clock Jitter Sensitivity
Price: 11.91-12.38 USD
High dynamic range, delta-sigma modulator, SOP-18, ±100mA, 500mW
Price: 0.001-0.002 USD
miniature aluminum electrolytic capacitor, DIP, RoHS compliance, high frequency
Price: 43.5-47 USD
IGBT Power Module, 1700 V, 22 Ohm, 110A, BSM75GB170DN2, eupec GmbH
Price: 9-10 USD
single-chip, Multistandard Sound Processor, QFP, Loudspeaker, Headphone channel, Four Stereo SCART
Price: 0.5-0.9 USD
8-bit microcontroller, programmable flash, 20MHZ, 8SOIC
Price: 1-2 USD
DC-to-DC step-down switching regulator, input voltage range of 2.6V to 5.5V, fixed frequency of 1...
Price: 1.3-1.5 USD
MACH220-15JC - High-Density EE CMOS Programmable Logic
Price: 3.98-6.95 USD
HP 484371-001 LCD Screen, 15.4", WXGA, 1 CCFL, Thin-film transistor (TFT), Active-matrix Liq...
Price: 60-64 USD
IGBT module, 1200 V, 200 A, 2-elements in a pack, Insulated Type
Price: 0.01-100 USD
aluminum electrolytic capacitor, 1000μF, 2.54 Arms, Non solvent-proof
Price: 0.16-0.19 USD
Field Effect Transistor, TO-252, 60V, 12A, 50W, AOD407
