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SeekIC No. : 00210762 Detail

BU508AFTBTU: Transistors Bipolar (BJT) NPN Triple Diffused Planar Silicon

BU508AFTBTU Data Sheet

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Part Number:: BU508AFTBTU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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1~5000

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Negotiable

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Upload time: 2024/4/26

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Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	700 V
Emitter- Base Voltage VEBO :	5 V	Maximum DC Collector Current :	5 A
DC Collector/Base Gain hfe Min :	225	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-3PF	Packaging :	Tube

Description

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Packaging : Tube
Maximum DC Collector Current : 5 A
Collector- Emitter Voltage VCEO Max : 700 V
DC Collector/Base Gain hfe Min : 225
Package / Case : TO-3PF

Parameters:

Technical/Catalog Information	BU508AFTBTU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	700V
Current - Collector (Ic) (Max)	5A
Power - Max	60W
DC Current Gain (hFE) (Min) @ Ic, Vce	2.25 @ 4.5A, 5V
Vce Saturation (Max) @ Ib, Ic	1V @ 2A, 4.5A
Frequency - Transition	-
Current - Collector Cutoff (Max)	1mA
Mounting Type	Through Hole
Package / Case	TO-3PF
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BU508AFTBTU BU508AFTBTU

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BU508AFTBTU

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