BUH1015HI

Transistors Bipolar (BJT) NPN Hi-Volt Fast Sw

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SeekIC No. : 00212108 Detail

BUH1015HI: Transistors Bipolar (BJT) NPN Hi-Volt Fast Sw

floor Price/Ceiling Price

Part Number:
BUH1015HI
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 700 V
Emitter- Base Voltage VEBO : 10 V Maximum DC Collector Current : 14 A
DC Collector/Base Gain hfe Min : 7 Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-93 Packaging : Tube    

Description

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Tube
Emitter- Base Voltage VEBO : 10 V
Package / Case : SOT-93
Collector- Emitter Voltage VCEO Max : 700 V
Maximum DC Collector Current : 14 A
DC Collector/Base Gain hfe Min : 7


Features:

STMicroelectronics PREFERRED SALESTYPES
HIGH VOLTAGE CAPABILITY
VERY HIGH SWITCHING SPEED





Application

HORIZONTAL DEFLECTION FOR COLOUR TV AND MONITORS




Specifications

Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage (IE = 0)
1500
V
VCEO
Collector-Emitter Voltage (IB = 0)
700
V
VEBO
Emitter-Base Voltage (IC = 0)
10
V
IC
Collector Current
14
A
ICM
Collector Peak Current (tp < 5 ms)
18
A
IB
Base Current
8
A
ICM
Collector Peak Current (tp < 5 ms)
11
A
Ptot
Total Dissipation at Tc = 25
160
70
W
Tstg
Storage Temperature
-65 to 150
Tj
Max. Operating Junction Temperature
150





Description

The BUH1015 and BUH1015HI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and use a Hollow Emitter structure to enhance switching speeds.
The BUH series BUH1015HI is designed for use in horizontal deflection circuits in televisions and monitors.




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