BUH100

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 400 V
Package / Case : TO-220AB
Packaging : Tube
Emitter- Base Voltage VEBO : 10 V
DC Collector/Base Gain hfe Min : 15
Maximum DC Collector Current : 10 A
Maximum Operating Frequency : 23 MHz (Min)


Features:

• Improved Efficiency Due to the Low Base Drive Requirements:
- High and Flat DC Current Gain hFE
- Fast Switching
• Robustness Thanks to the Technology Developed to Manufacture this Device
• Motorola "6 SIGMA" Philosophy Provides Tight and Reproducible Parametric Distributions


Specifications

Rating	Symbol	Value	Unit
CollectorEmitter Sustaining Voltage	VCEO	400	Vdc
CollectorBase Breakdown Voltage	VCBO	700	Vdc
CollectorEmitter Breakdown Voltage	VCES	700	Vdc
EmitterBase Voltage	VEBO	10	Vdc
Collector Current - Continuous                   - Peak (1)	IC ICM	10 20	Adc
Base Current - Continuous              - Peak (1)	IB IBM	4 10	Adc
*Total Device Dissipation @ TC = 25 *Derate above 25°C	PD	100 0.8	Watt W/
Operating and Storage Temperature	TJ, Tstg	65 to 150

Description

The BUH100 has an application specific stateofart die designed for use in 100 Watts Halogen electronic transformers.

This power transistor BUH100 is specifically designed to sustain the large inrush current during either the startup conditions or under a short circuit across the load.


Parameters:

Technical/Catalog Information	BUH100
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	700V
Current - Collector (Ic) (Max)	10A
Power - Max	100W
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 1A, 5V
Vce Saturation (Max) @ Ib, Ic	600mV @ 1A, 5A
Frequency - Transition	23MHz
Current - Collector Cutoff (Max)	100A
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BUH100 BUH100