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BUJ100AT

PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCESMVCEOVCBOICICMIBIBMPtotTstgTj Collector to emitter voltageCollector to emitter voltage (open base)Collector to base voltage (open emitter)Collector current (DC)Collector current peak valueBase current (DC)Base curren...

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BUJ100AT: PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCESMVCEOVCBOICICMIBIBMPtotTstgTj Collector to emitter voltageCollector to emitter voltage (open base)Collector to base ...

BUJ100AT Data Sheet

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Part Number:
BUJ100AT
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Pinout

Connection Diagram


Specifications

 SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT 
VCESM
VCEO
VCBO
IC
ICM
IB
IBM
Ptot
Tstg
Tj		 Collector to emitter voltage
Collector to emitter voltage (open base)
Collector to base voltage (open emitter)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature		 VBE = 0 V
Tsp25

-
-
-
-
-
-
-
-
-65
-

 700
400
700
1.0
2.0
0.5
1.0
6
150
150

V
V
V
A
A
A
A
W




Description

High-voltage, high-speed planar-passivated npn power switching transistor BUJ100AT in the SOT223 envelope intended for use in compact fluorescent lamps, low power electronic lighting ballasts and similar high frequency converters and inverters.


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