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Part Number: BUK436W-1000B
Description: N-channel enhancement mode field-effect power transistor in a plastic envelope.
- Table of contents:
BUK436W-1000B
-
Suppliers
DataSheet
General Description
BUK436W-1000B General Description
N-channel enhancement mode field-effect power transistor in a plastic envelope.
The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.
BUK436W-1000B Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS |
MIN. |
MIN. |
MIN. | |
|
VDS |
Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction Temperature |
- RGS=20k - Ths = 25 °C Ths = 100 °C Ths = 25 °C Ths = 25 °C - - |
- |
1000 |
V V V A A A W | |
BUK436W-1000B Connection Diagram
BUK436W-1000B
PDF/DataSheet Download
- Datasheet: BUK436W-1000B
- File Size: 54819 KB
- Manufacturer: PHILIPS [Philips Semiconductors]
- Click here to Download
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