MFG:Other Category:Other
Category: Other
MFG: Other
Description: The BUK456-1000 is a kind of N-channel enhancement mode field-effect power transistor in a plastic envelope and the devic...
The BUK456-1000 is a kind of N-channel enhancement mode field-effect power transistor in a plastic envelope and the device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and resistance in general purpose switching applications.
The absolute maximum ratings of BUK456-1000 are (1)VDS drain-source voltage: 1000 V; (2)VDGR drain-gate voltage R GS = 20 k: 1000 V; (3)±VGS gate-source voltage: 30 V; (4)ID drain current (DC) Tmb = 25°C: 3.1 A; (5)ID drain current (DC) Tmb = 100°C: 2.0 A; (6)IDM drain current (pulse peak value) Tmb = 25°C: 12 A; (7)Ptot total power dissipation T mb = 25°C: 125 W; (8)Tstg storage temperature : 55 to 150°C; (9)Tj junction temperature : 150°C.
The quick reference datas of BUK456-1000 are VDS drain-source voltage: 1000 V, ID drain current (DC): 3.1 A, Ptot total power dissipation: 125 W, RDS(ON) drain-source on-state resistance: 5 .
BUK456-1000
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N-channel enhancement mode field-effect power transistor BUK455-60H in a plastic envelope.BUK455-60H is intended for use in Automotive applications, Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpo...
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