MFG:SOT428/TO-252 Package Cooled:7850 D/C:PH
MFG: SOT428/TO-252
Package Cooled: 7850
D/C: PH
Description: N-channel enhancement mode field-effect power transistor in a plastic package using Philips General Pu...
N-channel enhancement mode field-effect power transistor in a plastic package using Philips General Purpose Automotive (GPA) TrenchMOS™ technology.
| Symbol | Parameter | Conditions | Min | Max | Unit |
| VDS | drain-source voltage (DC) | - | 30 | V | |
| VDGR | drain-gate voltage (DC) | RGS = 20 k | - | 30 | V |
| VGS | gate-source voltage (DC) | - | ±20 | V | |
| ID | drain current (DC) | Tmb = 25 ; VGS = 10 V; [1] Figure 2 and 3 [2] |
- | 64 55 |
A A |
| Tmb = 100 ; VGS = 10 V; Figure 2 [2] | 45 | A | |||
| IDM | peak drain current | Tmb = 25 ; pulsed; tp 10 s; Figure 3 | - | 257 | A |
| Ptot | total power dissipation | Tmb = 25 ; Figure 1 | - | 102 | W |
| Tstg | storage temperature | -55 | +175 | ||
| Tj | junction temperature | -55 | +175 | ||
| Source-drain diode | |||||
| IDR | reverse drain current (DC) | Tmb = 25 [1] [2] |
- - |
64 55 |
A A |
| IDRM | peak reverse drain current | Tmb = 25 ; pulsed; tp 10 s | - | 257 | A |
| Avalanche ruggedness | |||||
| EDS(AL)S | non-repetitive avalanche energy | unclamped inductive load; ID =55 A; VDS 30 V; VGS = 10 V; RGS = 50 ; starting Tj = 25 |
- | 267 | mJ |
BUK6213-30A
PDF/DataSheet Download
The BUK6212-40C is designed as one kind of intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) device that can be used in (1)12 V automotive systems; (2)electric and electro-hydraulic power steering; (3)motors, lamps and so...
The BUK6211-75C is designed as one kind of Standard and logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) device that can be used in (1)12 V automotive systems; (2)electric and electro-hydraulic power steering; (3)motors, lamps ...
The BUK6210-55C is designed as one kind of Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) device that can be used in (1)12 V automotive systems; (2)electric and electro-hydraulic power steering; (3)motors, lamps and so...
The BUK6209-30C is designed as one kind of Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) device that can be used in (1)12 V automotive systems; (2)electric and electro-hydraulic power steering; (3)motors, lamps and so...
The BUK6208-40C is designed as one kind of Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) device that can be used in (1)12 V automotive systems; (2)electric and electro-hydraulic power steering; (3)motors, lamps and so...
The BUK6207-55C is designed as one kind of Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) device that can be used in (1)12 and 24 V automotive systems; (2)electric and electro-hydraulic power steering; (3)motors, lamps...
Price: 1-2 USD
ES6018FF, ESS Technology,Inc, QFP, Integrated Circuits
Price: 0.16-0.25 USD
3-Terminal, 1A Positive Voltage Regulator, TO220, 35 V, Short Circuit Protection
Price: 12-14 USD
interface component, E1/T1/J1, High-density
Price: 0.01-100 USD
8-bit Flash-based Microcontroller, -0.3V to +7.5V, 250 mA, 1.0W, High-performance, PDIP18
Price: 1-1 USD
128bit, DDR, BGA, chipset
Price: 1-2 USD
L295N Modem Driver 6.11.02
Price: 0.05-1 USD
transistor, TO-92, 2A, High-speed switching, Low saturation voltage, 900mW
Price: 0.95-1 USD
IC FLASH 8MBIT 70MHZ 8SOIC - AT26DF081A-SSU
Price: 2.2-2.3 USD
Low Profile, High Rating 17A 277VAC, High temperature, UL/CUL, VDE 0700 approvals, relay, DIP
Price: 1-10 USD
silicon NPN epitaxial planar type, transistor, surface mount, 36 V, 220 W, 80W, 2SC2782, Toshiba S...
Price: 0.048-0.049 USD
surface mount superfast rectifier, SMB/DO-214AA, Low profile package, Built-in strain relief, 1.0A
Price: 4.5-5.5 USD
28 Pin PLCC, 8-Bit General-Purpose Binary-Output ADC, 20MSPS, Clamp Control
