MFG:STO426/TO-263/D2PAK Package Cooled:7850 D/C:PH
MFG: STO426/TO-263/D2PAK
Package Cooled: 7850
D/C: PH
Description: N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, fe...
| Symbol | Parameter | Conditions | Min | Max | Unit |
| VDS | drain-source voltage (DC) | 40 | V | ||
| VDGR | drain-gate voltage (DC) | RGS = 20 kW | 40 | V | |
| VGS | gate-source voltage (DC) | ±20 | V | ||
| ID | drain current (DC) | Tmb = 25 ; VGS = 10 V; Figure 2 and 3 |
155 | A | |
| 75 | A | ||||
| Tmb = 100 ; VGS = 10 V; Figure 2 | 75 | A | |||
| IDM | peak drain current | Tmb = 25 ; pulsed; tp 10 us; Figure 3 |
620 | A | |
| Ptot | total power dissipation | Tmb = 25; Figure 1 | 272 | W | |
| IGS(CL) | gate-source clamping current | continuous | 10 | mA | |
| tp = 5 ms; d = 0.01 | 50 | mA | |||
| Tstg | storage temperature | -55 | +175 | ||
| Tj | junction temperature | -55 | +175 |
* ESD protection
* Integrated current sensor
* Q101 compliant
* Standard level compatible.
BUK7105-40AIE
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