Purchase BUK71/7907-55AIE, In-stock BUK71/7907-55AIE From SeekIC.


Part Number: BUK71/7907-55AIE
Description: N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, fea...


Description: N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, fea...
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance, TrenchPLUS current sensing and diodes for ESD protection.
Product availability:BUK7107-55AIE in SOT426 (D2-PAK)
BUK7907-55AIE in SOT263B (TO-220AB).
| Symbol | Parameter | Conditions | Min | Max | Unit |
| VDS | drain-source voltage (DC) | - | 55 | V | |
| VDGS | drain-gate voltage (DC) | IDG = 250 mA | - | 55 | V |
| VGS | gate-source voltage (DC) | - | ±20 | V | |
| ID | drain current (DC) |
Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 |
- | 140 | A |
| - | 75 | A | |||
| Tmb = 100 °C; VGS = 10 V; Figure 2 | - | 75 | A | ||
| IDM | peak drain current |
Tmb = 25 °C; pulsed; tp £ 10 ms; | - | 560 | A |
| Ptot | total power dissipation | Tmb = 25 °C; Figure 1 | - | 272 | W |
| IGS(CL) | gate-source clamping current | continuous | - | 10 | mA |
| tp = 5 ms; d = 0.01 | - | 50 | mA | ||
| Tstg | storage temperature | -55 | +175 | °C | |
| Tj | junction temperature | -55 | +175 | °C | |
| Source-drain diode | |||||
| IDR | reverse drain current | Tmb = 25 °C | - | 140 | A |
| - | 75 | A | |||
| IDRM | peak reverse drain current T | mb = 25 °C; pulsed; tp £ 10 ms | - | 560 | A |
| Avalanche ruggedness | |||||
| IDR | reverse drain current | Tmb = 25 °C | - | 140 | A |
| - | 75 | A | |||
| IDRM | peak reverse drain current | Tmb = 25 °C; pulsed; tp £ 10 ms | - | 560 | A |
* Integrated current sensor
* Q101 compliant
* ESD protection
* Standard level compatible.
* Variable Valve Timing for engines
* Electrical Power Assisted Steering.
BUK 456-800A
PDF/DataSheet Download








