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Part Number: BUK71/7907-55AIE

 

 

 

 

Description: N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, fea...


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BUK71/7907-55AIE General Description


N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance, TrenchPLUS current sensing and diodes for ESD protection.

Product availability:BUK7107-55AIE in SOT426 (D2-PAK)
                               BUK7907-55AIE in SOT263B (TO-220AB).

BUK71/7907-55AIE Maximum Ratings

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) - 55 V
VDGS drain-gate voltage (DC) IDG = 250 mA - 55 V
VGS gate-source voltage (DC) - ±20 V
ID drain current (DC)

Tmb = 25 °C; VGS = 10 V;

Figure 2 and 3

- 140 A
- 75 A
Tmb = 100 °C; VGS = 10 V; Figure 2 - 75 A
IDM peak drain current
Tmb = 25 °C; pulsed; tp £ 10 ms; - 560 A
Ptot total power dissipation Tmb = 25 °C; Figure 1 - 272 W
IGS(CL) gate-source clamping current continuous - 10 mA
tp = 5 ms; d = 0.01 - 50 mA
Tstg storage temperature -55 +175 °C
Tj junction temperature -55 +175 °C
Source-drain diode
IDR reverse drain current Tmb = 25 °C - 140 A
- 75 A
IDRM peak reverse drain current T mb = 25 °C; pulsed; tp £ 10 ms - 560 A
Avalanche ruggedness
IDR reverse drain current Tmb = 25 °C - 140 A
- 75 A
IDRM peak reverse drain current Tmb = 25 °C; pulsed; tp £ 10 ms - 560 A

BUK71/7907-55AIE Features

* Integrated current sensor

* Q101 compliant

* ESD protection

* Standard level compatible.

BUK71/7907-55AIE Typical Application

* Variable Valve Timing for engines

* Electrical Power Assisted Steering.

BUK71/7907-55AIE datasheet

BUK 456-800A
PDF/DataSheet Download

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