BUK9107-40ATC

Features: · Typical on-state resistance 5.8 mW· Q101 compliant· ESD and overvoltage protection· Monolithically integrated temperature sensor for overload protection.Application· Automotive and power switching:· 12 V and 24 V high power motor drives (e.g. Electrical Power Assisted Steering (EPAS)· ...

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SeekIC No. : 004304445 Detail

BUK9107-40ATC: Features: · Typical on-state resistance 5.8 mW· Q101 compliant· ESD and overvoltage protection· Monolithically integrated temperature sensor for overload protection.Application· Automotive and power...

floor Price/Ceiling Price

Part Number:
BUK9107-40ATC
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Description



Features:

· Typical on-state resistance 5.8 mW
· Q101 compliant
· ESD and overvoltage protection
· Monolithically integrated temperature sensor for overload protection.





Application

· Automotive and power switching:
· 12 V and 24 V high power motor drives (e.g. Electrical Power Assisted Steering (EPAS)
· Protected drive for lamps.





Pinout

  Connection Diagram




Specifications

Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
-
40
V
VDGS
drain-gate voltage (DC)
-
40
V
VGS
gate-source voltage (DC)
-
±15
V
ID
drain current (DC) Tmb = 25 °C; VGS = 5 V;Figure 2 and 3
-
140
A
Tmb = 100 °C; VGS = 5 V; Figure 2
-
75
A
-
75
S
IDM
drain current (peak value) Tmb = 25 °C; pulsed; tp 10 s;Figure 3
-
560
A
Ptot
total power dissipation Tmb = 25 °C; Figure 1
-
272
W
IGS(CL)
gate-source clamping current continuous
-
10
mA
tp = 5 ms; = 0.01
-
50
mA
Visol(FET-TSD)
FET to temperature sense diode
isolation voltage
-
±100
V
Tstg
storage temperature
-55
+175
°C
Tj
junction temperature
-55
+175
°C
Source-drain diode
IDR
reverse drain current (DC) Tmb = 25 °C
-
140
A
-
75
A
IDRM
pulsed reverse drain current Tmb = 25 °C; tp 10 s
-
1.4
A
Avalanche ruggedness
EDS(CL)S
non-repetitive drain-source clamping energy unclamped inductive load; ID = 75 A; VDS 40 V; VGS = 5 V; RGS = 10 k; starting Tmb = 25 °C
-
500
mJ
Electrostatic discharge
Vesd
electrostatic discharge voltage; pins1, 3, 5 Human Body Model; C = 100 pF;R = 1.5 k
-
6
KV
[1] Voltage is limited by clamping
[2] Current is limited by power dissipation chip rating
[3] Continuous current is limited by package.





Description

N-channel enhancement mode field-effect power transistor BUK9107-40ATC in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance and TrenchPLUS diodes for clamping, ElectroStatic Discharge (ESD) protection and temperature sensing.

Product availability:
BUK9107-40ATC in SOT426 (D2-PAK).



The BUK9107-40ATC is designed as N-channel enhancement mode field-effect power transistor in a plastic package using trenchMOS technology, featuring very low on-state resistance and trenchPLUS diodes for clamping, electrostatic discharge (ESD) protection and temperature sensing. Typical applications is automotive and power switching which include 12V and 24V high power motor drives (e.g. electrical power assisted steering (EPAS)) and protected drive for lamps.

BUK9107-40ATC has four features. The first one is typical on-state resistance 5.8 m. The second one is Q101 compliant. The third one is ESD and overvoltage protection. The fourth one is monolithically integrated temperature sensor for overload protection. That are all the main features.

Some limiting values have been concluded into several points of BUK9107-40ATC as follow. The first one is about its drain-source voltage which would be max 40V. The second one is about its drain-gate voltage which woud be max 40V. The third one is about its gate-source voltage (DC) which would be max ±20V. The fourth one is about its drain current (DC) which would be max 140A at 25°C and would be max 75A at 100°C. The fifth one is about its peak drain current which would be max 560A. The sixth one is about its total power dissipation which would be max 272W. The seventh one is about its gate-source clamp current which would be 10mA for countinuous and 50mA at tp=5ms and =0.01. The eighth one is about its storage temperature which would be from -55 to +175°C. The ninth one is about its junction temperature which would be from -55 to +175°C. The tenth one is about its reverse drain current (DC) which would be 140A. The eleventh one is about its peak reverse drain current which would be max 560A. The twelfth one is about its non-repetitive drain-source clamping energy which would be max 1.4J. The thirteenth one is about its electrostatic discharge voltage, pins 1, 3, 5 which would be max 6kV.

Also some characteristics about BUK9107-40ATC. The first one is about its drain-gate zener breakdown voltage which would be min 40V at 25°C and min 40V at -55°C. The second one is about its gate-source threshold voltage which would be min 1V and typ 1.5V and max 2V at 25°C and min 0.5V at 175°C and max 2.3V at -55°C. And so on. For more information please contact us.








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