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BUK9107-55ATE

Features: ` Typical on-state resistance 5.8 m` Q101 compliant` ESD protection` Monolithically integrated temperature sensor for overload protection.Application·Automotive and power switching: ·12 V and 24 V high power motor drives (e.g. Electrical Power Assisted Steering (EPAS) · Protected drive f...

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BUK9107-55ATE: Features: ` Typical on-state resistance 5.8 m` Q101 compliant` ESD protection` Monolithically integrated temperature sensor for overload protection.Application·Automotive and power switching: ·12 V ...

BUK9107-55ATE Data Sheet

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Part Number:
BUK9107-55ATE
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

` Typical on-state resistance 5.8 m
` Q101 compliant
` ESD protection
` Monolithically integrated temperature sensor for overload protection.


Application

·Automotive and power switching:
   ·12 V and 24 V high power motor drives (e.g. Electrical Power Assisted Steering (EPAS)
   · Protected drive for lamps.


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Conditions
Min
Max
Unit
VDS
 drain-source voltage (DC)  
-
55
V
VDGS
 drain-gate voltage (DC)  
-
55
V
VGS
 gate-source voltage (DC)  
-
±15
V
ID
 drain current (DC) Tmb = 25 °C; VGS = 5 V;Figure 2 and 3
-
140
A
Tmb = 100 °C; VGS = 5 V; Figure 2
-
75
A
     
-
75
S
IDM
 drain current (peak value) Tmb = 25 °C; pulsed; tp 10 s;Figure 3
-
560
A
Ptot
 total power dissipation Tmb = 25 °C; Figure 1
-
272
W

IGS(CL)

 gate-source clamping current continuous
-
10
mA
tp = 5 ms; = 0.01
-
50
mA
Visol(FET-TSD) FET to temperature sense diode
isolation voltage		  
-
±100
V
Tstg
 storage temperature  
-55
+175
°C
Tj
 junction temperature  
-55
+175
°C
Source-drain diode
IDR
 reverse drain current (DC) Tmb = 25 °C
-
140
A
-
75
A
IDRM
 pulsed reverse drain current Tmb = 25 °C; tp 10 s
-
560
A
Avalanche ruggedness
EDS(CL)S
 non-repetitive drain-source clamping energy unclamped inductive load; ID = 75 A; VDS 55 V; VGS = 5 V; RGS = 50 k; starting Tmb = 25 °C
-
500
mJ
[1] Voltage is limited by clamping
[2] Current is limited by power dissipation chip rating
[3] Continuous current is limited by package.


Description

N-channel enhancement mode field-effect power transistor BUK9107-55ATE in a plastic package using TrenchMOS™ technology, featuring very low on state resistance and TrenchPLUS diodes for clamping, ElectroStatic Discharge (ESD) protection and temperature sensing.

Product availability:
BUK9107-55ATE in SOT426 (D2-PAK)
BUK9907-55ATE in SOT263B.




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