BUK9504-40A

MOSFET RAIL MOSFET

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BUK9504-40A Picture
SeekIC No. : 00160971 Detail

BUK9504-40A: MOSFET RAIL MOSFET

floor Price/Ceiling Price

Part Number:
BUK9504-40A
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 40 V
Gate-Source Breakdown Voltage : +/- 15 V Continuous Drain Current : 198 A
Resistance Drain-Source RDS (on) : 0.004 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Rail    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 40 V
Gate-Source Breakdown Voltage : +/- 15 V
Package / Case : TO-220AB
Packaging : Rail
Resistance Drain-Source RDS (on) : 0.004 Ohms
Continuous Drain Current : 198 A


Features:

· TrenchMOS™ technology
· Q101 compliant
· 175 °C rated
· Logic level compatible.



Application

· Automotive and general purpose power switching:
   · 12 V loads
   · Motors, lamps and solenoids.



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)  
-
40
V
VDGR
drain-gate voltage (DC) RGS = 20 k
-
40
V
VGS
gate-source voltage (DC)  
-
±15
V
ID
drain current (DC) Tmb = 25 °C; VGS = 5 V;
Figure 2 and 3
-
198
A
-
75
A
Tmb = 100 °C; VGS = 5 V; Figure 2
-
75
A
IDM
drain current (peak value) Tmb = 25 °C; pulsed; tp 10 s;Figure 3
-
794
A
Ptot
total power dissipation Tmb = 25 °C; Figure 1
-
300
W
Tstg
storage temperature  
-55
+175
°C
Tj
junction temperature  
-55
+175
°C
Source-drain diode
IDR
reverse drain current (DC) Tmb = 25 °C
-
198
A
-
75
A
IDRM
pulsed reverse drain current Tmb = 25 °C; tp 10 s
-
794
A
Avalanche ruggedness
WDSS
non-repetitive avalanche energy unclamped inductive load; ID = 75 A;
VDS 40 V; VGS = 5 V; RGS = 50 k; starting Tmb = 25 °C
-
1.6
mJ
[1] Current is limited by power dissipation chip rating
[2] Continuous current is limited by package



Description

N-channel enhancement mode field-effect power transistor BUK9504-40A in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

Product availability:
BUK9504-40A in SOT78 (TO-220AB); BUK9604-40A in SOT404 (D 2-PAK);
BUK9E04-40A in SOT226 (I2-PAK).




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