BUK9506-75B

MOSFET HIGH PERF TRENCHMOS

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BUK9506-75B Picture
SeekIC No. : 00163910 Detail

BUK9506-75B: MOSFET HIGH PERF TRENCHMOS

floor Price/Ceiling Price

Part Number:
BUK9506-75B
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 75 V
Gate-Source Breakdown Voltage : +/- 15 V Continuous Drain Current : 153 A
Resistance Drain-Source RDS (on) : 0.0055 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Rail    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Gate-Source Breakdown Voltage : +/- 15 V
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 75 V
Packaging : Rail
Resistance Drain-Source RDS (on) : 0.0055 Ohms
Continuous Drain Current : 153 A


Features:

· Very low on-state resistance
· Q101 compliant
· 175 °C rated
· Logic level compatible.



Application

· Automotive systems
· 12 V, 24 V, and 42 V loads
· Motors, lamps and solenoids
· General purpose power switching.



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)  
-
75
V
VDGR
drain-gate voltage (DC) RGS = 20 k
-
75
V
VGS
gate-source voltage (DC)  
-
±15
V
ID
drain current (DC) Tmb = 25 °C; VGS = 5 V;
Figure 2 and 3
-
153
A
-
75
A
Tmb = 100 °C; VGS = 5 V; Figure 2
-
75
A
IDM
drain current (peak value) Tmb = 25 °C; pulsed; tp 10 s;Figure 3
-
612
A
Ptot
total power dissipation Tmb = 25 °C; Figure 1
-
300
W
Tstg
storage temperature  
-55
+175
°C
Tj
junction temperature  
-55
+175
°C
Source-drain diode
IDR
reverse drain current (DC) Tmb = 25 °C
-
153
A
-
75
A
IDRM
pulsed reverse drain current Tmb = 25 °C; tp 10 s
-
612
A
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
clamping energy
unclamped inductive load; ID = 75 A;
VDS 75 V; VGS = 5 V; RGS = 50 k;
starting Tj = 25 °C
-
852
J
[1] Current is limited by power dissipation chip rating
[2] Continuous current is limited by package



Description

N-channel enhancement mode field-effect power transistor BUK9506-75B in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology.

Product availability:
BUK9506-75B in SOT78 (TO-220AB)
BUK9606-75B in SOT404 (D2-PAK).




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